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首页> 外文期刊>Crystal growth & design >Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units
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Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units

机译：Integral Monolayer-Scale精选的数码合金aln / GaN超塔，使用分层生长单位

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摘要

Acquiring AlN/GaN digital alloys with matching coherent lattices, atomically sharp interfaces, and negligible compositional fluctuations remains a challenge. In this work, the nature and formation mechanism of the constituent elements of AlN and GaN atomic layers growth was examined by first-principle calculations and experimental demonstration. On the basis of the calculated formation enthalpies, we developed a hierarchical growth method wherein AlN and GaN growth units are digitally stacked layer by layer through metal organic vapor-phase epitaxy, which involves the growth sequence instantaneously to control chemical potentials of the hierarchical growth units under different atmospheres. High-resolution X-ray diffraction and transmission electron microscopy confirmed that the hierarchical GaN and AlN growth units of digital-alloyed AlN/GaN structures had coherent lattices, abrupt interfaces, and integral monolayers at the atomic scale. The cathodoluminescence properties featured with single emission, combined with theoretical results, demonstrated the capability of electronic energies via the digital-alloyed AlN/GaN superlattices. These results provide a basis for the realization of other digital-alloyed nitride semiconductors.
机译：采用匹配的连贯格子，原子尖锐的界面和可忽略的组成波动以及可忽略不计的组建波动仍有挑战。在这项工作中，通过第一原理计算和实验证明研究了AlN和GaN原子层生长的组成元素的性质和形成机制。在计算的形成焓的基础上，我们开发了一种分层生长方法，其中通过金属有机气相外延通过层进行数字堆叠层，其瞬间涉及增长序列以控制等级生长单元的化学电位。在不同的环境下。高分辨率X射线衍射和透射电子显微镜证实，数字合金化ALN / GaN结构的分层GaN和AlN生长单元具有相干的晶格，突然的界面和原子标度的整体单层。通过单一排放，结合理论结果，可以通过数码合金的ALN / GAN超晶格表现出电子能量的能力。这些结果为实现其他数字合金化氮化物半导体提供了基础。

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  • 来源
    《Crystal growth & design》 |2019年第3期|共8页
  • 作者

    Gao Na; Feng Xiang; Lu Shiqiang; Lin Wei; Zhuang Qinqin; Chen Hangyang; Huang Kai; Li Shuping; Kang Junyong;

  • 作者单位

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Technol Sch Optoelect &

    Commun Engn Fujian Key Lab Optoelect Technol &

    Devices Xiamen 361024 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

    Xiamen Univ Dept Phys Fujian Prov Key Lab Semicond Mat &

    Applicat OSED Xiamen 361005 Peoples R China;

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  • 正文语种 eng
  • 中图分类 晶体学;
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