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by metal organic chemical vapor deposition method, high quality N-face GaN, InN and AlN and their alloys method of the hetero-epitaxial growth
by metal organic chemical vapor deposition method, high quality N-face GaN, InN and AlN and their alloys method of the hetero-epitaxial growth
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机译：金属有机化学气相沉积法，高质量N面GaN，InN和AlN及其合金的异质外延生长方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for heteroepitaxial growth of high quality, nitrogen (N) face gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), and their alloys, by preferable metal organic chemical vapor deposition (MOCVD) method.;SOLUTION: The method for growing an N-face group III nitride film includes: (a) providing a substrate having a growth surface with a misorientation angle to a Miller-indexed crystallographic plane; (b) forming a layer on the growth surface or in an upper part of the growth surface which sets N-polarity orientation to one or more subsequent layers formed on the layer; and (c) growing the N-face group III nitride film on the layer, the N-face group III nitride film having the N-polarity orientation set by the layer.;COPYRIGHT: (C)2013,JPO&INPIT
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