...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method
【24h】

Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method

机译：助焊剂法合成的BP金属有机化学气相沉积法生长AlN和GaN

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

BP with the size of 50 μm to 3 mm was synthesized by the Cu flux method. The BP crystals have a zincblend structure, and the lattice constant and the cathodoluminescence peak wavelength were 4.557 A and 370 nm, respectively. GaN and AlN were grown by metalorganic chemical vapor deposition on BP. It was found that AlN grown at 1150℃ on (100)BP was grown smoothly but that grown on (111)BP had a rough surface. GaN, however, was irregularly grown on both (100) and (111)BP. It was demonstrated that AlN on (100)BP is another candidate as a substrate for a UV-light-emitting diode.
机译：通过Cu助熔剂法合成了尺寸为50μm至3mm的BP。 BP晶体具有锌共混物结构，晶格常数和阴极发光峰波长分别为4.557 A和370 nm。 GaN和AlN通过在BP上的金属有机化学气相沉积法生长。结果表明，在（150）BP上于1150℃生长的AlN生长平稳，而在（111）BP上生长的AlN表面粗糙。但是，GaN在（100）和（111）BP上均不规则地生长。已经证明，在（100）BP上的AlN是另一种候选物作为UV发光二极管的衬底。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号