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Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures

机译：应变InAs量子阱结构的电子和结构特征之间的相互关系

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摘要

Indium-arsenide (InAs)-based devices are promising for next generation electronic and optoelectronic applications. Improving these devices requires greater control of the InAs quantum well properties, which in part, are related to the strain induced from the substrate material, buffer layer thickness, barrier composition, doping, and the heterointerface. This report focuses on the latter and includes X-ray diffraction and Hall results from a statistical experimental design (SED), which focused on the growth sequence at the heterointerface and growth throughout the channel, and illuminates correlations between structural variations and the electronic properties in strained InAs quantum well structures produced by molecular beam epitaxy (MBE). This data suggest that as more antimony from the sublayer is incorporated in the InAs layer, a product of anion exchange between antimony surface atoms and ensuing arsenic flux atoms, the strain states vary along with InAs channel mobility. (c) 2005 Elsevier B.V. All rights reserved.
机译：基于砷化铟（InAs）的器件有望用于下一代电子和光电应用。改善这些器件需要更好地控制InAs量子阱特性，这部分与衬底材料引起的应变，缓冲层厚度，势垒成分，掺杂和异质界面有关。本报告重点关注后者，并包括来自统计实验设计（SED）的X射线衍射和霍尔结果，该结果重点研究了异质界面处的生长顺序和整个通道的生长，并阐明了结构变化与电子特性之间的相关性。由分子束外延（MBE）产生的应变InAs量子阱结构。该数据表明，随着来自子层的更多锑掺入InAs层（锑表面原子与随后的砷通量原子之间的阴离子交换的产物）中，应变状态随InAs通道迁移率而变化。 （c）2005 Elsevier B.V.保留所有权利。

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