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首页> 外文期刊>Journal of Crystal Growth >Optical phonon modes in ZnO nanorods on Si prepared by pulsed laser deposition
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Optical phonon modes in ZnO nanorods on Si prepared by pulsed laser deposition

机译：脉冲激光沉积制备的Si上ZnO纳米棒中的光学声子模

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An array of vertically aligned c-axis-oriented zinc oxide (ZnO) nanorods were fabricated at a low substrate temperature (500 degrees C) without using any catalytic template on the Si substrate by pulsed laser deposition at a high pressure (1-5 Torr). The successive deposition of ZnO nanoparticles one over the other during growth led to the formation of elongated and well-isolated nanorods with a diameter in the range 70-350nm and up to 14 mu m long. The influence of deposition parameters on the Raman phonon modes was investigated. The polarized Raman studies were carried out in the backward geometry with incident light (i) parallel and (ii) perpendicular to the nanorod length. The activation of lower and upper surface phonon modes were observed in the ZnO nanorods between the transverse optical (omega(TO)) and the longitudinal optical (omega(LO)) phonon frequencies. The lower surface mode observed at similar to 475 cm(-1) is found to be predominant in the X(ZZ)(X) over bar configuration. The surface phonon modes were not found in the samples prepared at > 600 degrees C due to the coalescence process resulting in a continuous film. The agreement of polarized Raman spectra with single crystal data indicates the growth of good quality ZnO nanorods, and allows direct integration on Si without introducing contamination at the interface due to any catalytic material. (c) 2005 Elsevier B.V. All rights reserved.
机译：在低基板温度（500摄氏度）下，通过在高压（1-5 Torr）下进行脉冲激光沉积，在硅基板上不使用任何催化模板的情况下，在垂直方向排列的c轴取向的氧化锌（ZnO）纳米棒的阵列）。 ZnO纳米颗粒在生长过程中一个接一个的连续沉积导致形成细长且良好隔离的纳米棒，其直径在70-350nm范围内，最大长度为14μm。研究了沉积参数对拉曼声子模的影响。极化拉曼研究是在后向几何形状下进行的，入射光（i）平行且（ii）垂直于纳米棒的长度。在横向光学（omega（TO））和纵向光学（omega（LO））声子频率之间的ZnO纳米棒中观察到了下表面和上表面声子模式的激活。发现在类似于475 cm（-1）的情况下观察到的下表面模式在X（ZZ）（X）横杆构型中占主导地位。在> 600摄氏度下制备的样品中未发现表面声子模式，这是由于聚结过程导致形成连续膜所致。极化拉曼光谱与单晶数据的一致性表明高质量ZnO纳米棒的生长，并允许直接集成在Si上，而不会由于任何催化材料而在界面处引入污染。 （c）2005 Elsevier B.V.保留所有权利。

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