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首页> 外文期刊>Journal of Crystal Growth >Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb
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Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb

机译：Bi表面活性剂在OMVPE生长的GaAsSb中诱导的有序纳米域的微观结构

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摘要

Bismuth surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown on nominally [001] InP substrates by organometallic vapor phase epitaxy. The addition of Bi at a ratio of 1 % Bi/Ga in the gas flow results in the formation of CuAu {100} and chalcopyrite {210} ordered and disordered structures. Domains are approximately 10-20 nm in diameter for both undoped and heavily carbon-doped GaAsSb layers, and they account for ～40% (CuAu) and ～3% (chalcopyrite) of the total surface area. The addition of this small amount of Bi does not affect growth rate, Sb concentration, or surface morphology. Ordered domains with c-axes along the [001] growth direction were not observed. Photoluminescence and optical absorption measurements did not detect band gap changes in GaAsSb samples with and without {100} and {210} ordering, respectively.
机译：铋表面活性剂显示出对通过有机金属气相外延在标称[001] InP衬底上生长的GaAsSb合金的微观结构具有显着影响。在气流中以1％Bi / Ga的比例添加Bi导致形成CuAu {100}和黄铜矿{210}有序且无序的结构。对于未掺杂的和重碳掺杂的GaAsSb层，畴的直径约为10-20 nm，它们占总表面积的〜40％（CuAu）和〜3％（黄铜矿）。少量Bi的添加不会影响生长速率，Sb浓度或表面形态。没有观察到沿[001]生长方向具有c轴的有序域。光致发光和光吸收测量无法分别检测到{100}和{210}有序的GaAsSb样品中的带隙变化。

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