AiInP benchmarks for growth of AlGaInP compounds by organometrallic vapor-phase epitaxy

K.A. Berthness; Sarach R. Kurtz; S.E. Asher

首页> 外文期刊>Journal of Crystal Growth >AiInP benchmarks for growth of AlGaInP compounds by organometrallic vapor-phase epitaxy

【24h】

AiInP benchmarks for growth of AlGaInP compounds by organometrallic vapor-phase epitaxy

机译：通过有机金属气相外延生长AlGaInP化合物的AiInP基准

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have deomonstrated that source material and growth system purity can be successfully evaluated by characterizing AlInP samples grown by organometallic vapor-phase epitaxy with photocurrent versus voltage measurements in an electrochemical cell. The samples can be grown and characterized in about 1 h, making them well-suited for system benchmarks. Zn-doped AlInP has the greatest sensitivity for O contamination, a recurring problem in the growth of AlGaInP alloys.

机译：我们已经证明，通过用电化学电池中的光电流对电压测量来表征通过有机金属气相外延生长的AlInP样品，可以成功地评估源材料和生长系统的纯度。样品可以在大约1小时内生长并表征，使其非常适合系统基准测试。 Zn掺杂的AlInP对O污染的敏感性最高，这是AlGaInP合金生长中反复出现的问题。

著录项

来源
《Journal of Crystal Growth》 |1999年第1期|p.13-22|共10页
作者
K.A. Berthness; Sarach R. Kurtz; S.E. Asher;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Oxygen impurity; Indium compounds; AlGaInP; Organometallic vapor-phase epitaxy (OMVPE);

机译：氧杂质铟化合物;AlGaInP;有机金属气相外延（OMVPE）;

相似文献

外文文献
中文文献
专利

1. Development of High-Bandgap AlGaInP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy [J] . Emmett E. Perl, John Simon, John F. Geisz, Photovoltaics, IEEE Journal of . 2016,第3期

机译：有机金属气相外延生长高能隙AlGaInP太阳能电池的开发
2. heteroretpitaxial growth of GaN on γ-Al_2O_3/Si substrate by organometrallic vapor phase Epitaxy [J] . Akihiro Wakahara, Nobuharu Kawamura, Hiroshi Oishi Sensors and materials . 2002,第5期

机译：有机金属气相外延法在γ-Al_2O_3/ Si衬底上异质外延生长GaN
3. Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy [J] . Inatomi Yuya, Kangawa Yoshihiro, Kakimoto Koichi, Japanese journal of applied physics . 2017,第3期

机译：气相外延法改进化合物半导体生长的气相反应的热力学分析
4. InxGa1-xAsyP1-y (0.53 [C] . Wei Lin, Telecommunication Labs., Chungli, Optoelectronic Component Technologies . 1992

机译：有机金属气相外延用于激光二极管结构的InxGa1-xAsyP1-y（0.53
5. Engineering of compound semiconductor nanostructures by metalorganic vapor-phase epitaxy. [D] . Law, Daniel Ching Bong. 2003

机译：通过金属有机气相外延工程化化合物半导体纳米结构。
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy [O] . Kohashi, Yoshinori, Sato, Takuya, Ikejiri, Keitaro, 2012

机译：生长温度对InGaAs纳米线在选择性区域金属有机气相外延生长的影响
8. Decomposition Mechanisms of Antimony Source Compounds for Organometallic Vapor-Phase Epitaxy [R] . Larsen, C. A., Gedridge, R. W., Li, S. H., 1990

机译：有机金属气相外延锑源化合物的分解机理

AiInP benchmarks for growth of AlGaInP compounds by organometrallic vapor-phase epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅