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首页> 外文期刊>Journal of Crystal Growth >The growth of epitaxial lauminium on As containing compound semiconductors
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The growth of epitaxial lauminium on As containing compound semiconductors

机译:外延铝在含砷化合物半导体上的生长

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摘要

The growth of epitaxial aluminium on different (1 0 0) oriented compound semicoductors grown using the molecular beam epitaxy technique have been studied. After deposition of the first complete adlayer between the aluminium and the GaAs surface as evidenced by in situ reflection high electron energy diffraction (RHEED), ex situ atomic force microscopy (AFM) images agree that subsequent aluminium depostion is via a 3D nucleated growth mode. RHEED observations during continued deposition of epitaxial aluminium indicate a 2D growth mode dominated by the (1 0 0) orientatin.
机译:研究了在使用分子束外延技术生长的不同(1 0 0)取向的复合半导体上外延铝的生长。原位反射高电子能量衍射(RHEED)证明铝和GaAs表面之间沉积了第一个完整的附加层后,异位原子力显微镜(AFM)图像表明随后的铝变位是通过3D有核生长模式进行的。在外延铝的连续沉积过程中的RHEED观察表明,二维生长模式主要由(1 0 0)定向素主导。

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