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首页> 外文期刊>Journal of Crystal Growth >Study on the Oxgen concentration reduction in heavily Sb-doped silicon
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Study on the Oxgen concentration reduction in heavily Sb-doped silicon

机译：重掺杂Sb的硅中氧浓度降低的研究

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摘要

It was determined that oxygen concetnration in heavily Sb-doped silicon was about 40/100 lower than that in the lighlty doped Czochralski grwon silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynmaic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb_2O-3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal.
机译：通过同时进行的弹性反冲检测分析，可以确定重掺杂Sb的硅中的氧含量比轻掺杂Czochralski grwon硅中的氧含量低40/100，并且随着Sb含量的增加而降低。通过热力学计算，从熔体自由表面蒸发产生的氧气损失仅是由于SiO的形成，而Sb_2O-3蒸发可忽略不计。重掺杂Sb的CZSi中氧浓度降低的根本原因是当半径较大的元素Sb简并掺入硅晶体时，氧溶解度降低。

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