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N=doping of silicon carbide using neutron radiation, by increasing silicon 30 isotope concentration prior to irradiation and using heavy water as a neutron moderator
N=doping of silicon carbide using neutron radiation, by increasing silicon 30 isotope concentration prior to irradiation and using heavy water as a neutron moderator
The concentration of the Si30 isotope is increased prior to irradiation, which is carried out in the presence of heavy water as a moderator located between the neutron source/reactor and the silicon carbide material. A method for n-doping silicon carbide by neutron irradation, comprises exposing the silicon carbide to the neutron radiation in areas where the concentration of the Si30 isotope has been increased from a normal value of ca. 3 % to a higher value, preferably greater than or equal to 90 %. Neutron irradiation is carried out whilst modifying the neutron field by introducing a moderator comprising heavy water between the neutron source/reactor and the silicon carbide material. Independent claims are also included for: (a) the use of the doped silicon carbide for making semiconductor components, e.g. diodes or thyristors, and (b) semiconductor components made from the doped silicon carbide.
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