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首页> 外文期刊>Journal of Crystal Growth >Sulphur diffsion in CdTe and the phase diagram of the CdS-CdTe pseudo-binary alloy
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Sulphur diffsion in CdTe and the phase diagram of the CdS-CdTe pseudo-binary alloy

机译：CdTe中的硫扩散和CdS-CdTe假二元合金的相图

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摘要

The CdS-CdTe system is of interest for thin film heterojunction solar cells, their performance being critically affected by interdiffusion andchange of crystallogrphic phase at the interface during device processing. The diffusion of S in single crystal CdTe at temperatures between 372 and 675 deg C has been investigated by SIMS. Diffusion has been shown to be dominated by two mechanisms, with activation energies of 1.06 (±0.04) and 1.7 (±0.2) eV. The CdS-CdTe phase diagram has also been re-examined at temperatures of 700 and 1000 deg C. Samples were equilibrated at 1000 deg C, slowly cooled to the required temperature and analysed by X-ray diffraction (XRD) and particle induced X-ray emission (PIXE). The results agree with the previously published phase diagram at these temperatures.
机译：CdS-CdTe系统是薄膜异质结太阳能电池所关注的，其性能受到器件加工过程中界面处相互扩散和结晶相变化的严重影响。 SIMS已研究了S在单晶CdTe中在372至675摄氏度之间的扩散。事实证明，扩散主要受两种机理的控制，活化能为1.06（±0.04）和1.7（±0.2）eV。还已在700和1000摄氏度的温度下重新检查了CdS-CdTe相图。在1000摄氏度下平衡了样品，缓慢冷却至所需温度，并通过X射线衍射（XRD）和粒子诱导的X-射线发射（PIXE）。在这些温度下，结果与先前公布的相图一致。

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