Low resistive ZnSe substrates

P. Lemasson; A. Riviere; G. Didier

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Low resistive ZnSe substrates

机译：低电阻ZnSe基板

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Doping by anealing of ZnSe single crystals grown by solid phase recrystallisation in a mixure of Al and Zn at 860 deg C has been studied. The propertis of doped ZnSe crystals assessed by secondary ions mass spectroscopy, scanning electon microscopy (electron channelling patterns (ECP) and cathodoluminescence (CL)), double crystal X-ray diffraction (rocking curve) and Hall effect measurements depend strongly on the geometry of the crystal which is annealed.

机译：已经研究了通过在860℃下在Al和Zn的混合物中固相重结晶生长的ZnSe单晶进行退火掺杂。通过二次离子质谱，扫描电子显微镜（电子通道图（ECP）和阴极发光（CL）），双晶X射线衍射（摇摆曲线）和霍尔效应测量来评估掺杂的ZnSe晶体的性质。退火的晶体。

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来源
《Journal of Crystal Growth》 |1999年第3期|p.462-465|共4页
作者
P. Lemasson; A. Riviere; G. Didier;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Hall effect measurements; ZnSe crystals; Electron channelling patterns (ECP);

机译：霍尔效应测量;ZnSe晶体;电子通道图形（ECP）;

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Low resistive ZnSe substrates

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