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首页> 外文期刊>Journal of Crystal Growth >Heat transfer simulation in a vertical Bridgman CdTe growth configuration
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Heat transfer simulation in a vertical Bridgman CdTe growth configuration

机译:垂直Bridgman CdTe生长配置中的传热模拟

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摘要

Modelling and numerical of cyrstal growth processes have been shown to be poserful tools in order to understand the physical effects of different parameters on the growth conditions. In this study a finite difference/control volume technique for the study of heat transfer has been employed. This model takes into account the whole system: furance temperature profile, air gap between furnce walls and ampoule, ampoule geometry, crucible coating if any, solid and liquid CdTe thermal propertis, condition, convection and radiation of heat and phase change.
机译:为了了解不同参数对生长条件的物理影响,已经证明了晶状体生长过程的建模和数值模拟是很麻烦的工具。在这项研究中,已采用有限差分/控制体积技术研究传热。该模型考虑了整个系统:炉温度分布,炉壁与安瓿之间的气隙,安瓿几何形状,坩埚涂层(如有),固态和液态CdTe热特性,条件,对流和热辐射以及相变。

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