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首页> 外文期刊>Journal of Crystal Growth >Effect of trench strucutre on the qualtiy of InGaAs layers grown on patterned GaAs (1 1 1) A substrates
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Effect of trench strucutre on the qualtiy of InGaAs layers grown on patterned GaAs (1 1 1) A substrates

机译：沟槽结构对在图案化GaAs（1 1 1）A衬底上生长的InGaAs层质量的影响

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摘要

High-qualtiy InGaAs layers were successfully grown on patterned gaAs (1 1 1) A substrates masked with SiN_x film. It was found that a trench depth ≥55μm was requried to grow a InGaAs bridge laeyr over the trench. However, the InGaAs also bgrew form the trench bottom, which jointed the central part of the bridge layer. Conseuqently, the quality of the bridge layer was degraded. The gwoth of OInGaAs from the trench bottom was suppressed by depositing a SiN_x film on the trench bottom, and as a result InGaAs layer formed a cleanj bridge over he trench. A low etch pit density and highly intense with sharp FWHM phtooluminescence spectra obtianed for bridge layers confirmed their highlkj quality.
机译：高质量的InGaAs层成功地在图案化的gaAs（1 1 1）A衬底上覆盖了SiN_x膜。结果发现，需要沟槽深度≥55μm才能在沟槽上方生长InGaAs桥层。但是，InGaAs也从沟槽底部凸出，该沟槽底部连接了桥接层的中心部分。因此，桥接层的质量下降。通过在沟槽底部沉积SiN_x膜，抑制了来自沟槽底部的OInGaAs的生长，结果，InGaAs层在沟槽上方形成了清洁桥。桥层具有低刻蚀坑密度和高强度，并具有清晰的FWHM荧光发光光谱，证实了其高品质。

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