On the formation of self-assembled Ge/Si(0 0 1) quantum dots

Vinh Le Thanh; P. Boucaud

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On the formation of self-assembled Ge/Si(0 0 1) quantum dots

机译：自组装Ge / Si（0 0 1）量子点的形成

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In situ reflection hgih-energy electron diffraction (RHEED) along with awotmic force microscopy (AFM) and photoluminescnce spectroscopy (PL) have been used to investigate the Ge/Si(0 0 1) grwoth process in an ultrahigh-vacum chemicla-vapor depostion (UHV-CVD) system. The existece of an intermediate pahse between entirelly pseudomorphic 2D layers and 3D macroscopic islands is established. This phase is found to occur before the onset of the 2D to 3D growth mode transition determined form RHEED. It consists of square based pyramidal clsuters, and is found to be metastable aginst the formation of 3D macroscopic islands. The formation of this pahse can be explained by a local strain relaxation of the Ge wetting laeyr surface before reaching the equilibrium criticial thicknekss.

机译：原位反射高能电子衍射（RHEED）以及无渗力显微镜（AFM）和光致发光光谱（PL）已被用于研究Ge / Si（0 0 1）增长过程在超高真空化学蒸气蒸发中的应用（UHV-CVD）系统。建立了完全伪变形的2D层和3D宏观岛之间的中间pahse的存在。发现此阶段发生在从RHEED确定的2D到3D生长模式转变开始之前。它由基于正方形的金字塔形计算机组成，并且在形成3D宏观岛之前被发现是亚稳态的。这种帕氏体的形成可以通过在达到平衡临界厚度之前Ge润湿层表面的局部应变松弛来解释。

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《Journal of Crystal Growth》 |1999年第5期|p.1212-1217|共6页
作者
Vinh Le Thanh; P. Boucaud;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
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On the formation of self-assembled Ge/Si(0 0 1) quantum dots

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