Modulation doped structure with thick strained InAs channel beyond the critical thickness

T. Nakayama; H. Miyamoto

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Modulation doped structure with thick strained InAs channel beyond the critical thickness

机译：具有超过临界厚度的应变应变InAs通道的调制掺杂结构

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We successfully realized a modulation-doped structure on InP substrate with a thick strained InAs channel, which was twice thicker than the previously reported critical thickness. In our structure, an AlAs layer was inserted between an InAlAs spacer laeyr and the thick strained InAs channel to prevent two-dimensional to three-dimensional transition at the InAlAs/IOnAs heteroniterface. Using aw thick (7 nm) strained InAs layer as a channel, we simultaneously achieved a high electron mobiltiy of 18 500 cm~2/Vs and high sheet carrier density of 3.13×10~12 cm~-2 in the modulation doped structure on InP substrate.

机译：我们成功地在具有厚应变InAs沟道的InP衬底上实现了调制掺杂结构，该结构的厚度是以前报道的临界厚度的两倍。在我们的结构中，将AlAs层插入InAlAs间隔层和较厚的应变InAs通道之间，以防止InAlAs / IOnAs异质面的二维到三维过渡。以aw厚（7 nm）的应变InAs层为沟道，我们在调制掺杂结构中同时实现了18 500 cm〜2 / Vs的高电子迁移率和3.13×10〜12 cm〜-2的高片载流子密度。 InP基板。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.782-785|共4页
作者
T. Nakayama; H. Miyamoto;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
InAs; Strain; Critical thickoness; Mobility; MBE;

机译：InAs;应变;临界厚度;流动性MBE;

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专利

1. Photoluminescence properties of modulation-doped In (x) Al1-x As/In (y) Ga1-y As/In (x) Al1-x As structures with strained inas and gaas nanoinserts in the quantum well [J] . Galiev G. B., Vasilevskii I. S., Klimov E. A., Semiconductors . 2015,第9期

机译：量子阱中带有应变inas和gaas纳米插入物的调制掺杂In（x）Al1-x As / In（y）Ga1-y As / In（x）Al1-x As结构的光致发光特性
2. Modulation doping in Ge(x)Si(1-x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration [J] . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 1985,第3期

机译：Ge（x）Si（1-x）/ Si应变层异质结构中的调制掺杂：合金层厚度，掺杂挫折和覆层掺杂剂浓度的影响
3. Electrical Properties of InAlAs/InAs_(x)P_(1-x)/InP Composite-Channel Modulation-Doped Structures Grown by Solid Source Molecular Beam Epitaxy [J] . TONG-HO KIM, APRIL S. BROWN, ROBERT A. METZGER Journal of Electronic Materials . 2000,第2期

机译：固体源分子束外延生长的InAlAs / InAs_（x）P_（1-x）/ InP复合通道调制掺杂结构的电学性质
4. Superior confinement of two-dimensional electron gas in an In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As modulation-doped structure by inserting a strained InAs quantum well [C] . Akazaki, T., Nitta, Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on . 1995

机译：通过插入应变InAs量子阱，将二维电子气更好地限制在In / sub 0.52 / Al / sub 0.48 / As-In / sub 0.53 / Ga / sub 0.47 / As调制掺杂的结构中
5. Double-doped double-strained modulation-doped field effect transistor: 3D-SMODFET. [D] . Martin, Glenn Harvey. 1997

机译：双掺杂双应变调制掺杂场效应晶体管：3D-SMODFET。
6. Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures [O] . Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, 2014

机译：退火生长的n型和p型调制掺杂GaInNAs / GaAs应变量子阱结构的磁输运研究
7. Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures [O] . Irisawa, T., Myranov, Maksym, Mironov, O. A., 2003

机译：应变锗通道调制掺杂异质结构中有效质量，迁移率和传输时间的空穴密度依赖性
8. Characterization of Enhanced Schottky-Barrier InGaAs/Al(x)Ga(1-X)As Strained Channel Modulation-Doped Field-Effect Transistors [R] . Lott, J. A. 1987

机译：增强肖特基势垒InGaas / al（x）Ga（1-X）作为应变通道调制掺杂场效应晶体管的表征

Modulation doped structure with thick strained InAs channel beyond the critical thickness

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