Cathodoluminescence study of molecualr beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

V.A. Sqolvev; S.V. Sorokin; I.V. Sedova

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Cathodoluminescence study of molecualr beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

机译：分子束外延（MBE）生长的MgZnSSe和BeMgZnSe合金基异质结构的阴极发光研究

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Cathodoluminescence (CL) is shown to be a very effective and fast echnique for the study of defects and their spatial distributions in ZnSe-based epilayers and heterosructures, including laser diodes grown by MBE on GaAs. A relatvely low electron beam primary energy (<2-0 keV) is found to blke most preferable for the correct stacking fault (SF) observation. CL of undoped heterostructures iwth a CdSe fractional monolayer active region provides u8seful information on the spatial distributoin of large relaxed CdSe-based islands containing nonradiative recombination centers.

机译：对于在基于ZnSe的外延层和异质结构（包括由MBE在GaAs上生长的激光二极管）中的缺陷及其空间分布的研究中，阴极荧光（CL）被证明是一种非常有效且快速的技术。对于正确的堆垛层错（SF）观测，发现相对较低的电子束一次能量（<2-0 keV）最可取。 CdSe分数单层有源区的未掺杂异质结构的CL提供了有关包含非辐射重组中心的大型基于CdSe的宽松岛的空间分布的有用信息。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.481-485|共5页
作者
V.A. Sqolvev; S.V. Sorokin; I.V. Sedova;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
ZnMgSSe and BeMgZnSe heterostructures; Stacking faults; Cathodoluminescence;

机译：ZnMgSSe和BeMgZnSe异质结构;堆垛故障;阴极发光;

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1. A Raman spectroscopy study of MBE-grown Hg1-xCdxSe alloys grown on GaSb (211) by molecular beam epitaxy [J] . Pan W. W., Zhang Z. K., Lei W., Infrared physics and technology . 2019,第期

机译：分子束外延在GASB（211）上生长的MBE-种植HG1-XCDxse合金的拉曼光谱研究
2. A Raman spectroscopy study of MBE-grown Hg1-xCdxSe alloys grown on GaSb (211) by molecular beam epitaxy [J] . Infrared physics and technology . 2019,第期

机译：分子束外延在GASB（211）上生长的MBE-种植HG1-XCDxse合金的拉曼光谱研究
3. Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates [J] . Andreev A. A., Grishchenko Yu. V., Ezubchenko I. S., Technical physics letters: Letters to the Russian journal of applied physics . 2019,第2期

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4. Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface [C] . Li-Hsin Kuo, Univ. of Maryland/College Park, College Park, Producibility of II-VI Materials and Devices . 1994

机译：分子束外延（MBE）生长的ZnSxSe1-x / GaAs界面的透射电镜（TEM）缺陷研究
5. High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy. [D] . Mourad, Carole Issa. 2000

机译：通过调制分子束外延生长的高质量2微米四价砷化镓铟镓锑数字合金异质结构的高分辨率X射线衍射。
6. Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy [O] . Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, 2018

机译：等离子体辅助分子束外延生长的Zn极性BeMgZnO / ZnO异质结构上肖特基二极管的制备
7. Fine Structural Studies of AlGaN Laser Heterostructures with Digitally Alloyed Quantum Wells Grown on c-Al2O3 by plasma-Assisted Molecular Beam Epitaxy [O] . V.N. Jmerik, D.V. Nechaev, S.V. Ivanov, 2014

机译：基于血浆辅助分子束外延在C-Al2O3上生长的血糖激光异质结构的细结构研究
8. Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH). [R] . Folkes, P., Hier, H., Connelly, B. C., 2013

机译：分子束外延（mBE） - 未掺杂Gaas / alGaas双异质结构（DH）的非辐射寿命的优化。

Cathodoluminescence study of molecualr beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

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