1.75μm emission from self-organized InAs quantum dots on GaAs

V.M. Ustinov; A.Yu. Egorov; A.E. Zhukov

首页> 外文期刊>Journal of Crystal Growth >1.75μm emission from self-organized InAs quantum dots on GaAs

【24h】

1.75μm emission from self-organized InAs quantum dots on GaAs

机译：GaAs上自组织InAs量子点的1.75μm发射

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Photoluminescence (PL) of self-organized InAs quantum dots (QDs) grown by conventional solid source molecualr beam epitaxy (MBE) on a GaAs substrate was studied as functionof the deposition temperature. We have found that decreasing the growth temeprature below the 480-500 deg C range leads to the appearance and increase in intensity of a long wavelength band in addition to the usual 1μm line in a low-temeprautre PL spectrum. At the deposition temperature of 300 deg C this line domiantes in the room temeprature (RT) PL spectrumand its peak position is 1.75μm. TEM studies have shown that the origin of this line are agglomerates of QDs which are formed in two preferential chain- and clsuter-like shapes.

机译：研究了传统的固体源分子束外延（MBE）在GaAs衬底上生长的自组织InAs量子点（QD）的光致发光（PL）与沉积温度的关系。我们已经发现，将生长温度降低到480-500摄氏度以下会导致长波长带的出现并增加强度，除了在低温度聚醚砜光谱中通常使用的1μm谱线之外。在300℃的沉积温度下，该线在室温（RT）PL光谱中占主导地位，其峰值位置为1.75μm。 TEM研究表明，这条线的起源是QD的聚集体，它们以两种优先的链状和丛状形状形成。

著录项

来源
《Journal of Crystal Growth》 |1999年第5期|p.1143-1145|共3页
作者
V.M. Ustinov; A.Yu. Egorov; A.E. Zhukov;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Molecualr beam epitaxy; Quantum dots; Transmission electron microscopy; Photoluminescence;

机译：分子束外延;量子点;透射电子显微镜;光致发光;

相似文献

外文文献
中文文献
专利

1. Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties [J] . Masato Ohmori, Pavel Vitushinskiy, Tomoya Kojima, _Applied Physics Express . 2013,第4期

机译：InAs量子点上自组织棒生长形成InAs / AlGaAs / GaAs纳米线结构及其传输特性
2. Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates [J] . V.M. Ustinov, A.E. Zhukov, A.R. Kovsh Microelectronics journal . 2000,第1期

机译：GaAs衬底上自组织InAs量子点的长波发射
3. Emission of Electrons from the Ground and First Excited States of Self-Organized InAs/GaAs Quantum Dot Structures [J] . BRUNKOV P.N., KOVSH A.R., USTINOV V.M. Journal of Electronic Materials . 1999,第5期

机译：自组织InAs / GaAs量子点结构从基态和第一激发态发射电子
4. Enhanced spontaneous emission from InAs self-organized quantum dots in a two-dimensional GaAs photonic crystal defect microcavity [C] . P. -C. Yu, J. Sabarinathan, B. Kochman, Quantum Electronics and Laser Science Conference . 2002

机译：在二维GaAs光子晶体缺陷微腔中增强了INA自组织量子点的自发发射
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency [O] . Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, 2017

机译：检测自组织InAs / InGaAs量子点超晶格中的空间局部激子：一种提高光伏效率的方法
7. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering : a self-ordered quantum dot crystal [O] . Sritirawisarn, N Nut, Otten, van, FWM Frank, Eijkemans, TJ Tom, 2008

机译：通过自组织各向异性应变工程在InGaAsP / InP（100）上的波长控制的多层堆叠线性InAs量子点阵列：自排序量子点晶体

1.75μm emission from self-organized InAs quantum dots on GaAs

摘要

著录项

相似文献

相关主题

期刊订阅