Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by moleculwar beam epitaxy

R.C. Tu; Y.K. Su; W.H. Lan

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Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by moleculwar beam epitaxy

机译：分子束外延生长具有不同缓冲层的ZnCdSe / ZnSe / ZnMgSSe分离约束异质结构的结构和光学研究

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A great improvement of opticla qualtiy was observed from a ZnCdSe/ZnSe/ZnMgSSe single quantum well separatecionfinement heterostructure grown on GaAs substrate with ZnSe/ZnCdSe strained-layer superlattices (SLS) buffer laerys by molecular beam epitaxy. Transmission electron microsocpy images showed that a pitted surface was generallyf ormed after he desorption of GaAs substrate in a II-VI chamber. However, this pitted surface was smoothed otu by the growth of SLS buffer layer. Near room temperature photoluminescence indicated that the carrier collection efficiency of quantum wells in the sample with SLS buffer layer is better than the sample only with a ZnSe buffer layer.

机译：通过分子束外延，利用ZnSe / ZnCdSe应变层超晶格（SLS）缓冲层在GaAs衬底上生长的ZnCdSe / ZnSe / ZnMgSSe单量子阱分离精细异质结构观察到了光学质量的极大提高。透射电子显微镜图像显示，在II-VI室中解吸GaAs衬底后，通常会形成凹坑表面。但是，由于SLS缓冲层的生长，该凹坑表面被平滑了。接近室温的光致发光表明，具有SLS缓冲层的样品中量子阱的载流子收集效率要优于仅具有ZnSe缓冲层的样品中的量子阱。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.961-964|共4页
作者
R.C. Tu; Y.K. Su; W.H. Lan;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
ZnCdSe/ZnSe/ZnMgSSe; ZnSe/ZnSSe strained-layer superlattices; Molecular beam epitaxy;

机译：ZnCdSe / ZnSe / ZnMgSSe;ZnSe / ZnSSe应变层超晶格;分子束外延;

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Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by moleculwar beam epitaxy

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