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首页> 外文期刊>Journal of Crystal Growth >Surface structure transitions on (0 0 1) GaAs during MBE
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Surface structure transitions on (0 0 1) GaAs during MBE

机译：MBE期间表面结构在（0 0 1）GaAs上转变

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Experimental phase diagrams of GaAs (0 0 1) surface were obtained by direct measruring of the As_4 flux and the substrate temperautre. The infringement of the epitaxial growth was found to occur at the ratio of As_4 to Ga fluxes less than or equal to 0.25. Hence, the As_4 incorporation coefficient is close to unity during MBE. A diffusion model was suggested to describe positions of boundaries between surface strucutres (SS) in the phase diagrams. Dependencies of temperatures of SS transitions on the rate of surface heating in the absence of incident fluxes were obtained. The transition temperatures were discovered to tend to constant vlaues as the heating rawte increased. A model underlying this dependence was developed.
机译：通过直接测量As_4通量和衬底温度获得了GaAs（0 0 1）表面的实验相图。发现外延生长的侵害发生在As_4与Ga通量之比小于或等于0.25时。因此，MBE期间的As_4结合系数接近于1。建议使用扩散模型在相图中描述表面结构（SS）之间的边界位置。在没有入射通量的情况下，获得了SS转变温度与表面加热速率的相关性。发现随着加热原料的增加，转变温度趋于恒定。建立了这种依赖性的基础模型。

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