MBE growth and characterization of ZnSe self-organized dosts

Z.H. Ma; I.K. Sou; K.S. Wong

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MBE growth and characterization of ZnSe self-organized dosts

机译：ZnSe自组织掺杂物的MBE生长和表征

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ZnSe self-organized dot strucutres on ZnS thin films were fabricated by the molecualr beam epitaxy technique. Atomic force microscopy (AFM) images of exposed dots taken within the same day of growth reveal that the dot density increases with increasing ZnSE coverage. AFM images taken at later times (up to six months) shows ripening effect. Room temeprature photoluminescence strudies on buried-dot structures show promising optical characteristics that are sensitive to the grwoth temeprature used for dot formation.

机译：采用分子束外延技术在ZnS薄膜上制备了ZnSe自组织点结构。在生长的同一天拍摄的裸露点的原子力显微镜（AFM）图像显示，点密度随ZnSE覆盖率的增加而增加。稍后（最多六个月）拍摄的AFM图像显示出成熟效果。掩埋点结构上的室温三聚体发光结构显示出有希望的光学特性，该特性对用于形成圆点的常规三聚氰胺敏感。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.1218-1221|共4页
作者
Z.H. Ma; I.K. Sou; K.S. Wong;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Self-organized dots; ZnSe; GaP substrate; AFM; Ripening effects; Photoluminescence;

机译：自组织的点;硒化锌;GaP衬底;原子力显微镜成熟效果;光致发光;

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MBE growth and characterization of ZnSe self-organized dosts

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