Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals

C.T. Foxon; T.S. Cheng; S.V. Novikov

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Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals

机译：通过分子束外延在GaN块状晶体上生长的GaN的表面重构图案

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An investigation of the conditions giving rise to surface reconstruction for GaN grown by molecular beam epitaxy on (0 0 0 1) bulk GaN substratres has been carried out. The results of different surface reconstructions were investigated by supplying Ga and active nitrogen separately to GaN surfaces. A (2×2) reconstruction on (0 0 0 1)GaN substrates and for GaN layers grown on such substrates was observed. The (2×2) surface reconstruction is stable in the presence of an active nitrogen flux at high temperature, but it disappears on cooling the GaN sample below ～400 deg C.

机译：已经进行了对通过分子束外延在（0 0 0 1）块状GaN衬底上生长的GaN进行表面重构的条件的研究。通过分别向GaN表面提供Ga和活性氮来研究不同表面重建的结果。观察到在（0 0 0 1）GaN衬底上以及在这样的衬底上生长的GaN层的（2×2）重建。（2×2）表面重建在高温下存在活性氮通量的情况下是稳定的，但在将GaN样品冷却至约400摄氏度以下时消失。

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来源
《Journal of Crystal Growth》 |1999年第2期|p.1-7|共7页
作者
C.T. Foxon; T.S. Cheng; S.V. Novikov;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Gallium nitride; Molecular beam epitaxy; surface reconstruction;

机译：氮化镓分子束外延;表面重建;

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1. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target [J] . S. S. Kushvaha, M. Senthil Kumar, K. K. Maurya, AIP Advances . 2013,第9期

机译：使用HVPE生长的GaN体靶，通过激光分子束外延在蓝宝石（0001）上高度c轴取向生长GaN膜
2. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy [J] . C. Skierbiszewski, K. Dybko, W. Knap, Applied Physics Letters . 2005,第10期

机译：等离子体辅助分子束外延在块状GaN上生长的AlGaN / GaN异质结构中的高迁移率二维电子气
3. Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth [J] . Shuichi KUBO, Shiro IWATA, Satoshi KURAI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第11A期

机译：通过压力控制溶液生长制备的块状GaN单晶上反应性分子束外延生长GaN层的同质外延生长
4. Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template [C] . Toshihide Ide, Mitsuaki Shimizu, Jason Kuo, International conference on nitride semiconductors . 2003

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5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy [O] . Yongjin Wang, Fangren Hu, Kazuhiro Hane 2011

机译：分子束外延在独立式GaN光栅上InGaN / GaN量子阱的图案生长
7. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target [O] . S. S. Kushvaha, M. Senthil Kumar, K. K. Maurya, 2013

机译：使用HVpE生长的GaN体靶通过激光分子束外延在钴蓝（0001）上高度c轴取向生长GaN膜

Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals

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