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首页> 外文期刊>Journal of Crystal Growth >Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography
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Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography

机译：三轴X射线衍射和同步辐射双晶形貌研究绝缘体上键合硅上的Si / SiGe / Si

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摘要

Triple-axis X-ray diffraction (TAD) along with synchrotron radiation double-crystal topography (SRDT) is first time employed to investigate Si/SiGe/Si heterostructures on a bonded silicon-on-insulator (SOI) wafer. (004) TAD measurements present the crystallographic misalignment of the whole structure and the two diffraction peaks from the Si layers (i.e. the Si capping layer, the Si buffer and the SOI top Si layer) with the shift in Bragg angle. The bulk Si peak, the Si layers peak, and the SiGe layer peak on the SRDT (004) rocking curves are discerned, respectively. The asymmetry of the Si layers peak is attributed to the slight difference in lattice spacing and the little crystallographic misalignment. The two diffraction peaks with the shift in Bragg angle are identified from the Si capping layer and the underlying Si layers (i.e. the Si buffer and the SOI top Si layer). (004) symmetrical and (113) asymmetrical diffraction measurements demonstrate that the tensile strain and Ge diffusion result into the shift in Bragg angle of the Si layers.
机译：三轴X射线衍射（TAD）和同步加速器辐射双晶形貌（SRDT）首次用于研究键合绝缘体上硅（SOI）晶片上的Si / SiGe / Si异质结构。 （004）TAD测量显示了整个结构的晶体学失准和来自Si层（即，Si盖层，Si缓冲层和SOI顶部Si层）的两个衍射峰随布拉格角的偏移。分别确定了SRDT（004）摇摆曲线上的体Si峰，Si层峰和SiGe层峰。 Si层峰的不对称性归因于晶格间距的微小差异和很少的晶体学未对准。从Si盖层和下面的Si层（即Si缓冲层和SOI顶部Si层）可以识别出两个布拉格峰发生移动的衍射峰。 （004）对称和（113）非对称衍射测量表明，拉伸应变和Ge扩散导致Si层的布拉格角偏移。

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