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首页> 外文期刊>Journal of Crystal Growth >Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer
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Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

机译:通过使用MgF2缓冲层增强ZnO薄膜的近带边缘光致发光

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摘要

ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.
机译:制备了ZnO / MgF2 / ZnO夹心结构膜。通过X射线衍射,光致发光,光透射率和吸收率测量研究了缓冲层对ZnO膜的结构和光学性能的影响。测量结果表明,缓冲层具有改善ZnO薄膜质量和释放薄膜中残余应力的作用。与MgF2缓冲层上沉积的ZnO薄膜相比,裸露的衬底上沉积的ZnO薄膜的近带边缘发射显着增强,这是因为MgF2和ZnO之间的晶格失配比熔融二氧化硅和ZnO之间的晶格失配更小。 (c)2006 Elsevier B.V.保留所有权利。

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