Anisotropic vapor phase growth of Ga2O3 crystalline nanobelts

Lan YC; Crimp MA; Zhang JM

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Anisotropic vapor phase growth of Ga2O3 crystalline nanobelts

机译：Ga2O3晶体纳米带的各向异性气相生长

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Ga2O3 nanobelts were synthesized by gas reaction at high temperature in the presence of oxygen in ammonia. X-ray diffraction and chemical microanalysis revealed that the nanostructures were Ga2O3 with the monoclinic structure. Electron microscopy study indicated the nanobelts were single crystalline with broad (0 10) crystallographic planes. The nanostructures grew anisotropically with the growth direction of [60 (4) over bar]. Statistical analysis of the anisotropic morphology of the nanobelts and electron microscopy investigation of the nanobelt tips indicated that both vapor-solid and vapor-liquid-solid mechanisms controlled the growth process. The anisotropic nature of crystallographic morphology is explained in terms of surface energy. (c) 2006 Elsevier B.V. All rights reserved.

机译：Ga2O3纳米带是在氨中存在氧气的条件下，通过高温下的气体反应合成的。 X射线衍射和化学显微分析表明，纳米结构为Ga2O3，具有单斜晶结构。电子显微镜研究表明，纳米带是单晶的，具有宽（0 10）的晶面。纳米结构以[60（4）over bar]的生长方向各向异性地生长。纳米带的各向异性形态的统计分析和纳米带尖端的电子显微镜研究表明，汽-固和汽-液-固机制均控制着生长过程。用表面能解释晶体形态的各向异性。（c）2006 Elsevier B.V.保留所有权利。

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来源
《Journal of Crystal Growth》 |2006年第2期|p. 585-591|共7页
作者
Lan YC; Crimp MA; Zhang JM;
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作者单位

Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
crystal morphology; nanomaterials; semiconducting materials; MILLED GAN POWDERS; BETA-GA2O3 NANOWIRES; GALLIUM OXIDE; ARC-DISCHARGE; PHOTOLUMINESCENCE; LUMINESCENCE; NANOSHEETS; MECHANISM;

机译：晶体形态;纳米材料;半导体材料;甘炭粉;BETA-GA2O3纳米粉;氧化镓;电弧放电;光致发光;发光;纳米粉;机理;

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Anisotropic vapor phase growth of Ga2O3 crystalline nanobelts

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