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首页> 外文期刊>Journal of Crystal Growth >Empirical inference of in situ wafer sagging in Si epitaxy using pocket susceptor
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Empirical inference of in situ wafer sagging in Si epitaxy using pocket susceptor

机译：利用口袋基座在硅外延中进行原位晶片下垂的经验推论

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摘要

An empirical description of wafer sagging during silicon epitaxy using a dish-shaped susceptor pocket is presented. The proposed method is based on the discovery that the process history can be retrieved from the transfer pattern on the wafer backside. The characteristic tree-ring pattern is due to the contact transfer of the susceptor coating to the sagging wafer. Each ring is uniquely identified as a process step and vice versa. The number of rings is related to the growth schedule. The size and shape of the rings are sensitive to the growth conditions. A full picture of the in situ wafer sagging can be reconstructed by examining the transfer pattern after the wafer is unloaded from the reactor. The proposed method has been used to evaluate the wafer deformation in response to changes in the key process variable such as the growth temperature, susceptor geometry and reactor design. (C) 2004 Elsevier B.V. All rights reserved.
机译：给出了使用碟形基座袋进行硅外延过程中晶片下垂的经验描述。所提出的方法基于以下发现：可以从晶片背面的转移图案中检索处理历史。特征性的树形环图案是由于基座涂层与下垂晶片的接触转移所致。每个环都被唯一标识为一个处理步骤，反之亦然。环的数量与生长时间表有关。环的大小和形状对生长条件敏感。从反应堆中卸下晶圆后，可以通过检查传输模式来重建原位晶圆下垂的全貌。所提出的方法已用于评估晶片变形，以响应关键工艺变量（例如生长温度，基座几何形状和反应器设计）的变化。 （C）2004 Elsevier B.V.保留所有权利。

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