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首页> 外文期刊>Journal of Crystal Growth >1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge
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1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

机译：MOVPE在Ge上生长的1.6 / 1.1 eV变质GaInP / GaInAs太阳能电池

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This paper focuses on the metal-organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga_(0.29)In_(0.71)P top and Ga_(0.77)In_(0.23)As bottom subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 23%-In GaInAs are grown on 100-mm dia. (001) Ge substrates. Layers are observed to be fully relaxed by high-resolution X-ray diffraction. Threading dislocation densities of 3.1 x 10~6cm~(-2) are measured. Single-junction devices in the 1.1-eV materials demonstrate near 100% internal quantum efficiency above the band gap and an open-circuit voltage comparable to world-record silicon photovoltaic devices. The presence and strength of CuPt_B ordering is explored in controlling the band gap of the Ga_(0.29)In_(0.71)P top subcell devices between 1.647 and 1.593 eV. An order parameter of 0.28 is measured by X-ray measurement of the forbidden 1/2(115) reflection for the low-band gap material. The presence of low-resistance shunt pathways is observed as the present obstacle to reaching the potential efficiency of 30% for these metamorphic dual-junction devices.
机译：本文重点研究2结（2J）太阳能电池的金属-有机气相外延（MOVPE）生长，其中外延Ga_（0.29）In_（0.71）P顶部和Ga_（0.77）In_（0.23）作为底部子电池是在Ge衬底上生长的晶格不匹配。具有100％直径的GaInAs含量为23％的单结变质器件。 （001）Ge衬底。通过高分辨率X射线衍射可以观察到各层完全松弛。测量的螺纹位错密度为3.1 x 10〜6cm〜（-2）。 1.1-eV材料中的单结器件在带隙之上具有接近100％的内部量子效率，并且开路电压可与世界纪录的硅光伏器件相媲美。在控制Ga_（0.29）In_（0.71）P顶部子电池器件的禁带宽度为1.647和1.593 eV之间的过程中，探索了CuPt_B有序性和强度。通过X射线测量低带隙材料的被禁止的1/2（115）反射，可测量到0.28的有序参数。观察到低电阻分流路径的存在是这些变质双结器件达到30％潜在效率的当前障碍。

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