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首页> 外文期刊>Journal of Crystal Growth >Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates
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Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

机译：Si选择性外延生长在绝缘体上超薄硅衬底上的硅凸起的源极和漏极期间的附聚控制

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摘要

We have studied the impact of several Si selective epitaxial growth (SEG) process on the agglomeration of ultra-thin, patterned silicon-on-insulator (SOI) layers. Through a careful analysis of the effects of the in situ H_2 bake temperature (that followed an ex situ "HF-last" wet cleaning) and of the silicon growth temperature on the SOI film quality, we have been able to develop a low-temperature SEG process that allows the growth of Si on patterned SOI layers as thin as 3.4 nm without any agglomeration or Si moat recess at the Si window/shallow trench isolation edges. This process consists of an in situ H_2 bake at 650℃ for 2 min, followed by a ramping-up of the temperature to 750℃, then some SEG of Si at 750℃ using a chlorinated chemistry (i.e. SiH_2Cl_2 + HCl).
机译：我们已经研究了几种硅选择性外延生长（SEG）工艺对超薄图案化绝缘体上硅（SOI）层附聚的影响。通过仔细分析原位H_2烘烤温度（在原位进行“ HF-last”湿法清洗之后）和硅生长温度对SOI膜质量的影响，我们已经能够开发出低温SEG工艺可在厚度仅为3.4 nm的图案化SOI层上生长Si，而在Si窗口/浅沟槽隔离边缘处没有任何团聚或Si沟槽凹陷。此过程包括在650℃下原位H_2烘烤2分钟，然后将温度升至750℃，然后使用氯化化学方法（即SiH_2Cl_2 + HCl）在750℃下升高一些SEG的Si。

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