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首页> 外文期刊>Journal of Crystal Growth >Microstructural and optical properties dependent on the strain in double-stacked InAs/GaAs quantum dots
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Microstructural and optical properties dependent on the strain in double-stacked InAs/GaAs quantum dots

机译：微观结构和光学性质取决于InAs / GaAs双堆积量子点中的应变

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摘要

The dependence of the size and the strain in the double-stacked InAs/GaAs quantum dot (QD) was investigated by using the reflection high-energy electron diffraction pattern, transmission election microscopy (TEM), high-resolution X-ray diffraction (HRXRD), and photoluminescence (PL) measurements. The results of the TEM images and the reciprocal spacer mapping, obtained from the HRXRD measurements, showed that the microstructures of the InAs QDs were significantly affected by the strain-controlled InAs layer thickness, and the PL spectra showed that the peak intensity and position corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the InAs QDs strongly depended on the thickness of the InAs layer embedded in the GaAs barrier. The present results can help improve the precise control of the size and the density in the InAs/GaAs multiple-stacked QD arrays.
机译：利用反射高能电子衍射图谱，透射电子显微镜（TEM），高分辨率X射线衍射（HRXRD）研究了InAs / GaAs双量子点（QD）中尺寸和应变的依赖性。 ）和光致发光（PL）测量。从HRXRD测量获得的TEM图像和反向间隔物图谱的结果表明，InAs量子点的微观结构受到应变控制的InAs层厚度的显着影响，PL谱显示峰强度和位置对应从地电子子带到InAs量子点的地面重空穴带的带间过渡在很大程度上取决于嵌入在GaAs势垒中的InAs层的厚度。目前的结果可以帮助改善InAs / GaAs多层QD阵列中尺寸和密度的精确控制。

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