Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

A.P. Grzegorczyk; P.R. Hageman; J.L. Weyher; P.K. Larsen

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Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

机译：三甲基镓气氛中蓝宝石退火对MOCVD GaN外延的影响

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The microscopic evolution of GaN layers grown by metal-organic chemical vapor deposition using a new Ga treatment method was investigated. With the help of in situ reflectance measurements the coalescence and overgrowth of GaN epilayers was observed. The sample morphology was ex situ characterized by atomic force microscopy, scanning electron microscopy, and optical microscopy. By using orthodox etching in molten KOH-NaOH eutectic the dislocation density and N-polar inclusion density were revealed. Photoluminescence measurements were performed in order to determine the optical properties of the GaN layers. The experimental results demonstrated that by annealing the c-plane sapphire in trimethylgallium it is possible to control the GaN epitaxial layer polarity. The ratio between N and Ga polarity in the deposited GaN layers can be adjusted by means of changing the annealing time in TMG atmosphere of the sapphire substrate. For an annealing time of 20 min the layers are completely N-polar and for a time of 60 min Ga polar epilayer are grown.

机译：研究了使用新型Ga处理方法通过金属有机化学气相沉积法生长的GaN层的微观演变。借助原位反射率测量，观察到GaN外延层的聚结和过度生长。通过原子力显微镜，扫描电子显微镜和光学显微镜对样品的形态进行异位表征。通过在熔融的KOH-NaOH共晶中使用正统蚀刻，可以显示位错密度和N极性夹杂物密度。进行光致发光测量以确定GaN层的光学性质。实验结果表明，通过对三甲基镓中的c面蓝宝石进行退火，可以控制GaN外延层的极性。可以通过改变在蓝宝石衬底的TMG气氛中的退火时间来调节沉积的GaN层中的N和Ga极性之间的比率。退火时间为20分钟，层完全为N极，生长60分钟时，Ga极性外延层生长。

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来源
《Journal of Crystal Growth》 |2005年第2期|p.72-80|共9页
作者
A.P. Grzegorczyk; P.R. Hageman; J.L. Weyher; P.K. Larsen;
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作者单位

Radboud University, Institute for Molecules and Materials, Exp. Solid State Physics III, Toernooiveld 1, 6525 ED, Nijmegen, The Netherlands;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Crystal morphology; A1. Crystal structure; A1. Defects; A1. Nucleation; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition;

机译：A1。晶体形态;A1。晶体结构;A1。缺陷;A1。成核;A3。化学气相沉积工艺;A3。金属有机化学气相沉积;

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专利

1. Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition [J] . A.P. Grzegorczyk, J.L. Weyher, P.R. Hageman, Thin Solid Films . 2008,第8期

机译：金属有机化学气相沉积在三甲基铝气氛中的蓝宝石退火对GaN外延的影响
2. Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure [J] . M. Bockowski, P. Strak, P. Kempisty, Physica status solidi . 2008,第6期

机译：高氮压下MOCVD GaN /蓝宝石和HVPE自支撑衬底上GaN的液相外延
3. GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy [J] . Mitsuaki SHIMIZU, Yoshitaka HIRATA, Guanxi PIAO, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第12A期

机译：使用岛状GaN缓冲剂在蓝宝石衬底上生长GaN晶体，该GaN缓冲剂是通过重复进行薄层低温沉积和射频等离子体分子束外延退火而形成的
4. Influence of Mis-Orientation of C-plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films [C] . Seong-woo Kim, Toshimasa Suzuki, Hideo Aida Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：C面蓝宝石衬底错误取向对GaN薄膜MoCVD生长早期阶段的影响
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate [O] . Lei Zhang, Jiaoxian Yu, Xiaopeng Hao, -1

机译：HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响
7. MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density [O] . Marini, Jonathan, Leathersich, Jeffrey, Mahaboob, Isra, 2017

机译：在轴上蓝宝石衬底上的N极性GaN的mOCVD生长：alN的影响 GaN表面小丘密度上的成核层

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

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