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首页> 外文期刊>Journal of Crystal Growth >Preparat ion and characterization of large niobium-doped MoSe_2 single crystals
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Preparat ion and characterization of large niobium-doped MoSe_2 single crystals

机译：大铌掺杂的MoSe_2单晶的制备与表征

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Chemical vapor transport (CVT) process with bromine as a transporting agent has been utilized for growing large-size MoSe_2 single crystals by adding niobium dopant (nominal concentration ～0.5%) during the growth process. The maximum-size crystals are about 10 x 10 mm~2 in surface area and 2 mm in thickness. The large edge plane facilitates an easier study of the influence of crystal anisotropy on the electrical and optical properties of the layered crystals. Anisotropy of the conductivity and indirect band gap parallel and perpendicular to the crystal c-axis due to the interlayer van der Waals interaction and red shift of the indirect and direct band gaps due to doping have been measured. It is found that the electrical and optical properties of niobium-doped MoSe_2 are almost similar to those of the pure MoSe_2 single crystal apart from a drastic reduction in the conductivity anisotropy and red shift of the band gap.
机译：通过在生长过程中添加铌掺杂剂（标称浓度〜0.5％），以溴为传输剂的化学气相传输（CVT）工艺已用于生长大尺寸的MoSe_2单晶。最大尺寸的晶体的表面积约为10 x 10 mm〜2，厚度为2 mm。大的边缘平面有助于更轻松地研究晶体各向异性对层状晶体的电学和光学性质的影响。已经测量了由于层间范德华相互作用而导致的平行于和垂直于晶体c轴的电导率和间接带隙的各向异性以及由于掺杂而导致的间接带隙和直接带隙的红移。已经发现，除了电导率各向异性和带隙的红移显着降低之外，掺铌的MoSe_2的电学和光学性质几乎与纯MoSe_2单晶的相似。

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