首页> 外国专利> LIQUID PHASE GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, LIQUID PHASE EPITAXIAL GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE

LIQUID PHASE GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, LIQUID PHASE EPITAXIAL GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE

机译：单晶碳化硅种子结晶的液相生成方法，单晶碳化硅种子结晶，单晶碳化硅种子结晶液相，液相结晶生成方法，单晶硅酸盐，单晶硅酸盐，单晶硅酸盐基质和单晶碳化硅种子晶体基质

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摘要

PROBLEM TO BE SOLVED: To generate small pieces of single crystal silicon carbide seed crystals by allowing a single crystal silicon carbide seed crystal to self-grow by using a polycrystalline silicon carbide substrate.;SOLUTION: A polycrystalline silicone carbide substrate 5 is placed adjacently opposite to a carbonized face 11 of another polycrystalline silicon carbide substrate 5 subjected to carbonization, a metal silicon melt 12 is made present in a gap between the substrates to induce liquid phase epitaxial growth so that a single crystal silicon carbide seed crystal self-grows on the surface of the carbonized polycrystalline silicon carbide substrate 5 to generate a plurality of small pieces 13a of the single crystal silicon carbide seed crystal 13a.;COPYRIGHT: (C)2008,JPO&INPIT

机译：解决的问题：通过使用多晶硅碳化硅衬底使单晶碳化硅种子晶体自生长来生成小片的单晶碳化硅种子晶体;解决方案：将多晶碳化硅衬底5相对地放置在另一碳化后的多晶碳化硅衬底5的碳化面11上，使金属硅熔体12存在于衬底之间的间隙中，以引起液相外延生长，从而使单晶碳化硅籽晶自生长在硅衬底上。碳化的碳化硅碳化硅衬底5的表面产生多个小片的单晶碳化硅籽晶13a。; COPYRIGHT：（C）2008，JPO＆INPIT

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公开/公告号JP2008037684A

专利类型
公开/公告日2008-02-21

原文格式PDF
申请/专利权人 KWANSEI GAKUIN;
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申请/专利号JP20060212627
发明设计人 KANEKO TADAAKI;
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申请日2006-08-03
分类号C30B29/36;C30B19/12;H01L21/208;
国家 JP
入库时间 2022-08-21 20:23:06

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