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外文会议>Annual conference on applications of X-ray analysis
>Characterization of Single Crystal Epitaxial Aluminum Nitride Thin Films on Sapphire, Silicon Carbide and Silicon Substrates by X-ray Double Crystal Diffractometry and Transmission Electron Microscopy
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Characterization of Single Crystal Epitaxial Aluminum Nitride Thin Films on Sapphire, Silicon Carbide and Silicon Substrates by X-ray Double Crystal Diffractometry and Transmission Electron Microscopy
Epitaxial AlN thin films grown on sapphire, silicon and silicon carbide substrates were studied using x-ray double crystal diffractometry and transmission electron microscopy to compare the structure, residual stress and defect concentration in these thin films. The AlN thin films was found to have a wurtzite type of structure with a small distortion in lattice parameters which results in a small residual stress of the order of 10~9 dynes/cm~2 in the film.
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