• 主题
高级搜索  >
历史搜索 清空历史
首页> 外国专利> METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER AND THIN FILM EPITAXIAL WAFER

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER AND THIN FILM EPITAXIAL WAFER

机译：碳化硅单晶，碳化硅单晶锭，碳化硅单晶基体，碳化硅表皮和薄膜表皮的生产方法

页面导航
  • 摘要
  • 著录项
  • 相似文献

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal ingot where a {0001} face wafer having little micro pipe and dislocation defects, good quality and a large diameter can be produced with excellent reproducibility and at a low cost.;SOLUTION: The silicon carbide single crystal ingot is produced by a method wherein a silicon carbide single crystal ingot is grown by using a seed crystal to grow a silicon carbide single crystal having a slope face which inclines 20° or larger and less than 90° from the {0001} face on a growing face, that the seed crystal to grow the silicon carbide single crystal having the slope face which inclines 20° or larger and less than 90° from the {0001} face on the growing face is cut again from the grown silicon carbide single crystal ingot and that the growth of the silicon carbide single crystal is repeated a plurality of times. The angle difference between the inclination direction of the slope face of the seed crystal used in the (n-1)th growing step and that used in the (n)th growing step in the {0001} face is 45° or larger and 135° or smaller.;COPYRIGHT: (C)2006,JPO&NCIPI
机译：解决的问题：提供一种制造SiC单晶锭的方法，其中具有微管少且位错缺陷少的{0001}面晶片，可以以优异的再现性和低成本来生产高质量和大直径。解决方案：碳化硅单晶锭是通过以下方法生产的：通过使用籽晶生长具有倾斜20°的倾斜面的碳化硅单晶来生长碳化硅单晶锭。或大于90度从生长表面上的{0001}面起，生长具有倾斜20°的倾斜面的碳化硅单晶的籽晶形成于晶种表面。或大于90度从生长的表面上的{0001}面起，再次从生长的碳化硅单晶锭上切下碳化硅单晶，并重复多次生长。 {0001}面中在第（n-1）个生长步骤中使用的籽晶的倾斜面与在第（n）个生长步骤中使用的籽晶的倾斜面的倾斜方向之间的角度差为45°。或更大且135°或更少。版权所有：（C）2006，JPO＆NCIPI

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号