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首页> 外文期刊>Journal of Crystal Growth >In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors
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In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors

机译:MOCVD生长过程中的高质量InP基长波长分布式布拉格反射器的原位应变控制

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摘要

Significant effort in compound semiconductor device growth centers on control of strain in the multi-component alloys, thus, the ability to measure layer strain during the growth process is highly desirable. We have developed an instrument to measure strain in situ during the MOCVD growth process on rotating disk reactors. Excellent qualitative and quantitative agreement was observed between in situ and ex situ determined strain values. Strain agreement within 100 ppm was commonly observed on AlGalnAs layers nearly lattice matched to InP substrates. We demonstrate the ability to intelligently adjust layer strain during growth and show the importance of layer strain control on AlGalnAs/ InP distributed Bragg reflector surface morphology and optical reflectance performance.
机译:在化合物半导体器件生长中的大量努力集中在控制多组分合金中的应变,因此,非常需要在生长过程中测量层应变的能力。我们已经开发了一种仪器,可以在旋转盘式反应器的MOCVD生长过程中现场测量应变。在原位和异位确定的应变值之间观察到极好的定性和定量一致性。通常在几乎与InP基板晶格匹配的AlGalnAs层上观察到100 ppm以内的应变一致性。我们展示了在生长过程中智能调节层应变的能力,并显示了对AlGalnAs / InP分布的布拉格反射器表面形态和光学反射性能进行层应变控制的重要性。

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