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首页> 外文期刊>Journal of Crystal Growth >Characterization of optical and electrical quality of Mg-doped In_xGa_(1-x)N grown by MOCVD
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Characterization of optical and electrical quality of Mg-doped In_xGa_(1-x)N grown by MOCVD

机译：MOCVD法生长掺Mg的In_xGa_（1-x）N的光学和电学性质

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摘要

We investigated the optical and electrical quality of Mg-doped In_xGa_(1-x)N (0≤x≤0.045) grown by metalorganic chemical vapor deposition with different In and Mg contents. The band edge emission of p- In_xGa_(1-x)N layer depended on the Mg incorporation. The emission intensity of InGaN band edge peak was drastically reduced with increasing Mg incorporation, indicating that the concentration of nonradiative recombination centers increased with Mg doping concentration in InGaN layer. Mg-related emission of p-In_xGa_(1-x)N was changed from the shallow acceptor level to deep acceptor level as Mg concentration increased. Additionally, photoluminescence spectra showed that rhe band to acceptor emission energy E(e~-, A~0) decreased with increasing In composition under the same Mg concentration of 2 x 10~(19)/cm~3. The activation energy of Mg obtained from PL spectra is reduced from 170 to 123 meV with increasing In content. Although the intensity of InGaN band edge emission and the donor-acceptor pair emission drastically decreased with increasing Mg concentration, the hole concentration increased up to 2.5 x 10~(18)/cm~3 with Mg concentration for p-In_(0.045)Ga_(0.955)N.
机译：我们研究了通过金属有机化学气相沉积生长的，具有不同In和Mg含量的Mg掺杂In_xGa_（1-x）N（0≤x≤0.045）的光学和电学质量。 p-In_xGa_（1-x）N层的带边缘发射取决于Mg的掺入。 InGaN能带边缘峰的发射强度随着Mg掺入的增加而急剧降低，这表明非辐射复合中心的浓度随着InGaN层中Mg掺杂浓度的增加而增加。随着Mg浓度的增加，p-In_xGa_（1-x）N的Mg相关发射从浅受体能级变为深受体能级。此外，光致发光光谱表明，在相同的镁浓度2 x 10〜（19）/ cm〜3下，rh能带对受体发射能E（e〜-，A〜0）随In组成的增加而降低。随着In含量的增加，从PL光谱获得的Mg的活化能从170meV降低到123meV。尽管随着Mg浓度的增加InGaN带边缘发射强度和施主-受主对发射强度急剧下降，但对于p-In_（0.045）Ga_，随着Mg浓度的增加，空穴浓度增加到2.5 x 10〜（18）/ cm〜3。 （0.955）N。

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