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首页> 外文期刊>Journal of Crystal Growth >Effect of initial process conditions on the structural properties of AlN films
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Effect of initial process conditions on the structural properties of AlN films

机译：初始工艺条件对AlN薄膜结构性能的影响

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A two-step pressure process was recently developed for depositing A1N layers on sapphire substrates by MOCVD. Together with optimum substrate nitridation, the process resulted in A1N layers that had FWHM values of ～350 and ～550 arcsec for the (0002) and (1012) rocking curves, respectively. While the films show excellent X-ray FWHM values, they often have poor morphology as well as small inversion domains spread throughout the film surface. A systematic study was initiated to understand the effect of substrate nitridation and the initial process conditions on the surface morphology and the structural properties. Using atomic force microscopy, transmission electron microscopy, and X-ray diffraction, it was found that the nitridation conditions as well as the initial deposition conditions result in a mixed polarity surface coverage of the substrate. It is possible to force the growth of predominately Al- or N-polarity AlN layers by choosing different initial growth conditions.
机译：最近开发了一种两步加压工艺，用于通过MOCVD在蓝宝石衬底上沉积AlN层。结合最佳的衬底氮化，该过程导致A1N层的（0002）和（1012）摇摆曲线的FWHM值分别为〜350和〜550 arcsec。尽管薄膜显示出优异的X射线半高全宽值，但它们通常具有较差的形态以及分布在整个薄膜表面的小反转区。开始了系统的研究，以了解底物氮化和初始工艺条件对表面形态和结构特性的影响。使用原子力显微镜，透射电子显微镜和X射线衍射，发现氮化条件以及初始沉积条件导致基板的混合极性表面覆盖。通过选择不同的初始生长条件，可以迫使主要是Al或N极性的AlN层生长。

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