A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method

Yue Wang; Quanbao Li; Qinglin Han; Qinghua Ma; Bingwen Song; Wanqi Jie; Yaohe Zhou; Yuko Inatomi

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A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method

机译：加压布里奇曼法用于HgCdTe单晶生长的两阶段技术

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摘要

A two-stage technique has been used to grow large diameter Hg_(1-x)Cd_xTe crystals (x = 0.214) using a pressurized Bridgman (P-Bridgman) method, with a starting charge of x = 0.06. The two-stage technique has enabled the growth of large crystalline ingots of HgCdTe 40 mm in diameter at the very low growth temperature of 680-720℃. It was shown that the HgCdTe crystal had a homogeneous composition of x = 0.214 along the growth direction.

机译：使用加压Bridgman（P-Bridgman）方法使用两阶段技术生长大直径Hg_（1-x）Cd_xTe晶体（x = 0.214），起始进料x = 0.06。两阶段技术可以在680-720℃的极低生长温度下生长直径40 mm的HgCdTe大型晶锭。结果表明，HgCdTe晶体沿生长方向具有x = 0.214的均匀组成。

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来源
《Journal of Crystal Growth》 |2004年第4期|p.273-282|共10页
作者
Yue Wang; Quanbao Li; Qinglin Han; Qinghua Ma; Bingwen Song; Wanqi Jie; Yaohe Zhou; Yuko Inatomi;
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作者单位

The Institute of Space and Astro-nautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. low temperature growth; A2. pressurized bridgman; A2. two-stage technique; B1. large diameter HgCdTe;

机译：A1。低温生长;A2。加压布里奇曼;A2。两阶段技术;B1。大直径HgCdTe;

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A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method

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