Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

A. Lobanova; K. Mazaev; E. Yakovlev; R. Talalaev; A. Galyukov; Yu. Makarov; D. Gotthold; B. Albert; L. Kadinski; B. Peres

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Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

机译：商用立式高速转盘反应器中III族氮化物MOVPE的参数研究

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A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of operating conditions on the flow pattern and growth rate uniformity in vertical high-speed rotating disk reactors. A number of three-dimensional computations have been made in terms of detailed physical-chemical MOVPE models. Mechanisms governing the flow patterns, as one of the factors affecting the growth efficiency, are considered. Special attention is given to parametric studies aimed at revealing the effect of operating conditions on the growth rate uniformity.

机译：对III族氮化物外延生长进行了全面分析，以揭示操作条件对立式高速旋转盘式反应器中流型和生长速率均匀性的可能影响。根据详细的物理化学MOVPE模型，已经进行了许多三维计算。作为影响生长效率的因素之一，考虑了控制流动模式的机制。特别关注旨在揭示操作条件对生长速率均匀性的影响的参数研究。

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来源
《Journal of Crystal Growth》 |2004年第3期|p.354-362|共9页
作者
A. Lobanova; K. Mazaev; E. Yakovlev; R. Talalaev; A. Galyukov; Yu. Makarov; D. Gotthold; B. Albert; L. Kadinski; B. Peres;
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作者单位

STR, Inc., P.O. Box 70604, Richmond, VA 23255-0604, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. computer simulation; A1. vertical rotating-disk reactor; A3. metalorganic vapor phase epitaxy; B1. nitrides;

机译：A1。计算机仿真;A1。立式转盘反应器;A3。金属有机气相外延;B1。氮化物;

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1. Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors [J] . K.M. Mazaev, A.V. Lobanova, E.V. Yakovlev, Journal of Crystal Growth . 2004,第2a3期

机译：商用立式高速转盘反应器中AlGaN MOVPE的建模和实验分析
2. Growth of ZnO Thin Films by Using MOCVDwith a High-Speed Rotating Disk Reactor [J] . Naoki NISHIMOTO, Obuliraj SENTHILKUMAR, Takahiro YAMAMAE, Journal of the Korean Physical Society . 2008,第5aPta2期

机译：高速旋转圆盘反应器MOCVD法生长ZnO薄膜
3. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors [J] . M. Dauelsberg, C. Martin, H. Protzmann, Journal of Crystal Growth . 2007,第Jan期

机译：紧密耦合的喷淋头和行星反应堆中接近大气压的III型氮化物MOVPE的建模和工艺设计
4. Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor [C] . George D. Papasouliotis, Jie Su, Balakrishnan Krishnan, Meeting of the Electrochemical Society . 2015

机译：单晶片旋转盘MOCVD反应器中的外延III-氮化物膜生长
5. Modeling of nickel deposition in a rotating disk CVD reactor. [D] . Ardham, Vikram Reddy. 2013

机译：旋转圆盘CVD反应器中镍沉积的建模。
6. The Use of Drip Flow and Rotating Disk Reactors for Staphylococcus aureus Biofilm Analysis [O] . Kelly Schwartz, Rachel Stephenson, Margarita Hernandez, 2010

机译：滴流和转盘反应器在金黄色葡萄球菌生物膜分析中的应用
7. Modeling analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors [O] . Kadinski L., Merai V., Parekh A., 2004

机译：MOCVD垂直旋转圆盘反应器中GaN / InGaN沉积的模型分析
8. Growth Characteristics of a Vertical Rotating-Disk OMVPE (Organometallic Vapor Phase Epitaxy) Reactor [R] . Wang, C. A., Patnaik, S., Caunt, J. W., 1988

机译：垂直旋转盘OmVpE（有机金属气相外延）反应器的生长特性

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

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