Dewetted growth and characterisation of high-resistivity CdTe

M. Fiederle; T. Duffar; J.P. Garandet; V. Babentsov; A. Fauler; K.W. Benz; P. Dusserre; V. Corregidor; E. Dieguez; P. Delaye; G. Roosen; V. Chevrier; J.C. Launay

首页> 外文期刊>Journal of Crystal Growth >Dewetted growth and characterisation of high-resistivity CdTe

【24h】

Dewetted growth and characterisation of high-resistivity CdTe

机译：高电阻率CdTe的去湿法生长和表征

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Undoped and Ge-doped CdTe crystals have been grown using the dewetting phenomenon on the earth. A gap effected by the dewetting between the crystal and ampoule was created with a thickness up to 60 μm, but it was not stable for the complete growth process. The dewetting was stable for the first 25 mm of the growth, but than it got unstable. The main deteriorating factor was a change of a liquid-solid interface shape from the convex to concave. Structural, electrical, photoelectrical and optical characteristics of the studied samples showed better material quality in dewetted areas.

机译：利用地球上的去湿现象可以生长出未掺杂和锗掺杂的CdTe晶体。晶体和安瓿之间因去湿而产生的缝隙形成的厚度最大为60μm，但对于整个生长过程而言并不稳定。在生长的前25毫米，去湿是稳定的，但是变得不稳定。主要的恶化因素是液-固界面形状从凸形变为凹形。所研究样品的结构，电，光电和光学特性表明其在润湿区域具有更好的材料质量。

著录项

来源
《Journal of Crystal Growth》 |2004年第4期|p.429-435|共7页
作者
M. Fiederle; T. Duffar; J.P. Garandet; V. Babentsov; A. Fauler; K.W. Benz; P. Dusserre; V. Corregidor; E. Dieguez; P. Delaye; G. Roosen; V. Chevrier; J.C. Launay;
展开▼
作者单位

Freiburger Materialforschungszentrum, Albert-Ludwigs-Universitaet Freiburg, Stefan-Meier-Strasse 21, D-79104 Freiburg, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. dewetting; A2. single crystal growth; B1. cadmium compounds;

机译：A1。除湿;A2。单晶生长;B1。镉化合物;

相似文献

外文文献
中文文献
专利

1. Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method [J] . Quanzhong Jiang, Andy W. Brinkman, Perumal Veeramani, Japanese journal of applied physics . 2010,第2issue1期

机译：改进的近空间升华法生长高电阻率CdTe厚膜的外延生长
2. Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors [J] . KRISHNA C.MANDAL, SUNG HOON RANG, MICHAEL CHOI Journal of Electronic Materials . 2007,第8期

机译：辐射探测器用高电阻率CdTe晶体的成分超压生长和表征
3. Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors [J] . Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Journal of Electronic Materials . 2007,第8期

机译：辐射探测器中高电阻率CdTe晶体的成分超压生长和表征
4. Growth of high-resistivity CdTe and (Cd,Zn)Te crystals [C] . Michael Fiederle, Alex Fauler, Vladimir Babentsov, Conference on hard x-ray and gamma-ray detector physics . 2004

机译：高电阻率CDTE和（CD，Zn）TE晶体的生长
5. Metal organic vapor phase epitaxy growth and electrical characterization of high-resistivity and lattice-mismatched indium-arsenic-phosphorus and aluminum-indium-arsenic-phosphorus buffer layers for indium arsenide and indium phosphide device application. [D] . Bui, Steven Sontung. 2008

机译：用于砷化铟和磷化铟器件的高电阻率和晶格失配的铟砷磷和铝铟砷磷缓冲层的金属有机气相外延生长和电学表征。
6. Time-Dependent Growth of Silica Shells on CdTe Quantum Dots [O] . Pavlína Modlitbová, Karel Klepárník, Zdeněk Farka, 2018

机译：CdTe量子点上硅壳的时变生长
7. CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM [O] . T. Taguchi, J. Shirafuji, Y. Inuishi 2015

机译：改性THm生长的高电阻率CdTe载流子传输和捕获过程

Dewetted growth and characterisation of high-resistivity CdTe

摘要

著录项

相似文献

相关主题

期刊订阅