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首页> 外文期刊>Journal of Crystal Growth >Highly improved performance of a 350 nm ultraviolet light-emitting diode containing Al_xGa_(1-x)N/Al_yGa_(1-y)N distributed Bragg reflectors
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Highly improved performance of a 350 nm ultraviolet light-emitting diode containing Al_xGa_(1-x)N/Al_yGa_(1-y)N distributed Bragg reflectors

机译：包含Al_xGa_（1-x）N / Al_yGa_（1-y）N分布式布拉格反射器的350 nm紫外发光二极管的性能大大提高

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摘要

By introducing Al_(0.49)Ga_(0.51)N/Al_(0.16)Ga_(0.84)N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350 nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362 nm, the GaN bandgap.
机译：通过引入Al_（0.49）Ga_（0.51）N / Al_（0.16）Ga_（0.84）N分布式布拉格反射器（DBR），可以实现发射波长约为350的紫外（UV）发光二极管（LED）的性能蓝宝石衬底上的nm显着提高。与具有相似发射波长的常规UV-LED相比，输出功率提高了2.3倍。由DBR引起的这种增强要比也包含DBR的基于InGaN的蓝色LED产生的增强更大，在后者中，与没有DBR的基于InGaN的蓝色LED相比，据报道光功率增加了1.5倍。这可以归因于将DBR引入UV-LED中，该DBR可以强烈抑制所谓的内部吸收问题，这是阻碍在发射波长低于362 nm的蓝宝石衬底上生长的UV-LED性能的关键因素之一。 GaN带隙

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