...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Superlattices and microstructures >On the Al_xGa_(1-x)N/Al_yGa_(1-y)N/Al_xGa_(1-x)N (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes
【24h】

On the Al_xGa_(1-x)N/Al_yGa_(1-y)N/Al_xGa_(1-x)N (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

机译：在Al_xGa_（1-x）N / Al_yGa_（1-y）N / Al_xGa_（1-x）N（x> y）p电子阻挡层上以改善基于AlGaN的深紫外发光二极管的空穴注入

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

AbstractThis work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.Highlights•This work reports the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N p-EBL on the carrier injection for III-nitride DUV LEDs.•We find that, by inserting the p-Al0.50Ga0.50N layer, the p-EBL is able to enhance the hole injection efficiency and reduce the electron leakage.•Meanwhile, by properly designing the p-Al0.50Ga0.50N layer thickness, the hole concentration in the p-EBL increases.•As a result, the optical performance is improved. This work provides additional understanding for the physics of DUV LEDs.
机译： 摘要 这项工作提出了[0001]取向的基于AlGaN的深紫外（DUV）发光二极管（LED），该发光二极管具有专门设计的p -电子阻挡层（p-EBL）以实现高内部量子效率。通过采用Al 0.60 Ga 0.40 N / Al 0.50 Ga 0.50 N / Al 0.60 Ga 0.40 N结构化的p-EBL，其中p-Al 0.50 Ga 0.50 N层嵌入到p-EBL中。此外，不同厚度对p-Al 0.50 Ga 0.50 N插入层的影响在空穴和电子注入上也进行了研究。与DUV LED相比，以p-Al 0.60 Ga 0.40 N作为EBL ，如果p-Al 0.50 Ga 0.50 N插入层的设计正确。 突出显示 • 此工作报告Al 0.60 Ga 0.40 N / Al 0.50 Ga 0.50 N / Al 0.60 Ga 0.40 N p-EBL用于III型氮化物DUV LED的载流子注入。 • 我们通过插入p-Al 0.50 Ga 0.50 N层，p-EBL可以提高空穴注入效率并减少电子泄漏。 • 同时，通过适当地设计p-Al 0.50 Ga 0.50 N层厚度，可以形成孔p-EBL中的浓度增加。 •

著录项

  • 来源
    《Superlattices and microstructures》 |2018年第1期|472-477|共6页
  • 作者

    Chunshuang Chu; Kangkai Tian; Mengqian Fang; Yonghui Zhang; Luping Li; Wengang Bi; Zi-Hui Zhang;

  • 作者单位

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

    Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology,Key Laboratory of Electronic Materials and Devices of Tianjin;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Light-emitting diodes; p-EBL; Insertion layer; Hole injection; Electron-leakage;

    机译：发光二极管;p-EBL;插入层;空穴注入;电子泄漏;

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号