• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Effect of in situ applied electric field on the growth of La_2Ti_2O_7 thin films by chemical solution deposition
【24h】

Effect of in situ applied electric field on the growth of La_2Ti_2O_7 thin films by chemical solution deposition

机译：化学溶液沉积原位施加电场对La_2Ti_2O_7薄膜生长的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

La_2Ti_2O_7 ferroelectric thin films were prepared on Pt/TiO_2/SiO_2/Si substrates by chemical solution deposition. A low electric field (1-2 V/cm) was in situ applied during the film crystallization. It was first found that the impact of in situ applied low electric field annealing has significant influence on the structures and surface morphologies of La_2Ti_2O_7 films. The applied low electric field decreases crystallization temperature by 50-100℃ and increases grain size from ～ 140 to 300 nm. As a possible origin is proposed that the electric energy provides an extra driving force for the growth of the La_2Ti_2O_7 grains. An in situ applied low electric field annealing during the film crystallization is a promising technique adjusting film growth for wet chemical method.
机译：通过化学溶液沉积法在Pt / TiO_2 / SiO_2 / Si衬底上制备了La_2Ti_2O_7铁电薄膜。在膜结晶过程中原位施加低电场（1-2 V / cm）。首次发现，原位施加低电场退火对La_2Ti_2O_7薄膜的结构和表面形貌有显着影响。施加的低电场使结晶温度降低50-100℃，并使晶粒尺寸从〜140纳米增加到300纳米。提出了一种可能的来源，即电能为La_2Ti_2O_7晶粒的生长提供了额外的驱动力。在薄膜结晶过程中原位施加的低电场退火是一种有前途的技术，可用于湿化学方法中调节薄膜的生长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号