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首页> 外文期刊>Journal of Crystal Growth >Influence of hydrogen peroxide solution on the properties of ZnO thin films
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Influence of hydrogen peroxide solution on the properties of ZnO thin films

机译：过氧化氢溶液对ZnO薄膜性能的影响。

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摘要

Two pieces of uniform ZnO thin film samples made by MOCVD were treated with hydrogen peroxide (H_2O_2) solution and oxygen, respectively. It is observed that the UV emission peak (3.30eV) becomes stronger, the green emission peak (2.36eV) becomes weaker, and the green emission peak shifts from 525 nm (2.36eV) to 500 nm (2.48 eV). A new UV emission peak occurs at 383 nm (3.24eV) in one sample, which has a green emission peak at 525 nm after it was treated with 30% H_2O_2. For the other sample, which has no obvious green emission peak, the UV emission peak (3.29 eV) becomes stronger, a new UV emission peak emerges at 383 nm (3.24eV), and a new weak green emission peak appears at about 500 nm (2.48eV) after it was treated with 30% H_2O_2. It was found through integral interference microscopy that the surface of samples are smoother and some crystal boundary lines appears that are either parallel to each other or intersect into an angle of about 60°. No new hexagonal pits or other shape pits emerge after both of the samples were treated with 30% H_2O_2, from which it can be inferred that the 30% H_2O_2 does not corrode the ZnO situated at the crystal lattice, although it can corrode the excess Zn and some impurities localized at the crystal boundaries.
机译：用过氧化氢（H_2O_2）溶液和氧气分别处理通过MOCVD制得的两片均匀的ZnO薄膜样品。观察到紫外线发射峰（3.30eV）变强，绿色发射峰（2.36eV​​）变弱，绿色发射峰从525 nm（2.36eV​​）转变为500 nm（2.48 eV）。在一个样品中，一个新的UV发射峰出现在383 nm（3.24eV）处，用30％H_2O_2处理后，在525 nm处出现了绿色发射峰。对于其他没有明显绿色发射峰的样品，UV发射峰（3.29 eV）变得更强，在383 nm（3.24eV）处出现一个新的UV发射峰，在约500 nm处出现一个新的弱绿色发射峰。 30％H_2O_2处理后（2.48eV）。通过积分干涉显微镜发现，样品的表面更光滑，并且出现了一些晶体边界线，这些边界线彼此平行或相交成大约60°的角度。在两个样品都用30％H_2O_2处理后，没有新的六角形凹坑或其他形状的凹坑出现，从中可以推断出，尽管30％H_2O_2可以腐蚀过量的Zn，但它们不会腐蚀位于晶格上的ZnO。一些杂质位于晶体边界。

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