Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

Higashiwaki M; Matsui T

首页> 外文期刊>Journal of Crystal Growth >Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

【24h】

Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

机译：从通过等离子体辅助分子束外延生长的未掺杂和掺Si的InN薄膜的光致发光特性估算本征InN的带隙能

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

InN films with electron densities of 1.6 x 10(18)-1.4 x 10(19) cm(-3) had photoluminescence (PL) properties with clear electron density dependencies. The PL peak shifted to a higher energy with increasing electron density, whereas PL intensity decreased with increasing electron density. These characteristics are typical of degenerate semiconductors with a large density of defects and/or dislocations. We estimated a band-gap energy of 0.6-0.65 eV for intrinsic InN from the shift in the PL peak position and band-gap shrinkage due to the conduction-band renormalization effect. (C) 2004 Elsevier B.V. All rights reserved.

机译：电子密度为1.6 x 10（18）-1.4 x 10（19）cm（-3）的InN薄膜具有光致发光（PL）特性，具有明确的电子密度依赖性。 PL峰随电子密度的增加而移向更高的能量，而PL强度随电子密度的增加而下降。这些特性是具有大量缺陷和/或位错密度的简并半导体的典型特征。我们根据PL峰位置的变化和由于导带重归一化效应引起的带隙收缩，估计出本征InN的带隙能量为0.6-0.65 eV。（C）2004 Elsevier B.V.保留所有权利。

著录项

来源
《Journal of Crystal Growth》 |2004年第1期|p. 162-166|共5页
作者
Higashiwaki M; Matsui T;
展开▼
作者单位

Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
molecular beam epitaxy; nitrides; semiconducting III-V materials; semiconducting indium compounds; ELECTRON-TRANSPORT; WURTZITE INN; LAYER; ALN;

机译：分子束外延;氮化物;半导体III-V族材料;半导体铟化合物;电子运输;纤锌矿INN;层;ALN;

相似文献

外文文献
中文文献
专利

1. Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy [J] . Yong-zhao Yao, Takashi Sekiguchi, Naoki Ohashi, Applied Physicsletters . 2008,第21期

机译：等离子体辅助分子束外延法测量In / N比变化的InN外延膜的光致发光和X射线衍射测量
2. Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy [J] . C.-H. Shen, H.-Y. Chen, H.-W. Lin, Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：等离子体辅助分子束外延生长的垂直排列的InN纳米棒的异常光致发光特性
3. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams [J] . A. Uedono, S. F. Chichibu, M. Higashiwaki, Journal of Applied Physics . 2005,第4期

机译：用单能正电子束探测等离子体辅助分子束外延生长的Si掺杂InN中的空位型缺陷
4. Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy [C] . T. Yodo, H. Yona, Y. Harada, International conference on nitride semiconductors . 2003

机译：从SI（111）和蓝宝石（0001）基板上的INN 2.2eV附近的可见排放由电子回旋谐振等离子体辅助分子束外延
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy [O] . Kuang-Wei Liu, Shoou-Jinn Chang, Sheng-Joue Young, 2011

机译：等离子体辅助分子束外延制备含CrN纳米岛的InN纳米棒
7. Structural properties of InN films grown on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy [O] . YongJin Cho, Oliver Brandt, Maxim Korytov, 2012

机译：等离子辅助分子束外延在O形ZnO（0001）上生长的INN薄膜的结构特性
8. Combined Single-Phonon Raman and Photoluminescence Study of Direct and Indirect Band-Gap AlxGa1-xAs Alloys Grown by Molecular-Beam Epitaxy. [R] . Lao, P., Tang, W. C., Madhukar, A., 1989

机译：分子束外延生长直接和间接带隙alxGa1-xas合金的单声子拉曼光谱和光致发光研究。

Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅