GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium

William B. Grant; Artashes Amamchyan; Robert S. Stennick; Deo V. Shenai

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GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium

机译：MOVPE前体的GC / MS分析和三甲基铟，三甲基铝和双（环戊二烯基）镁中杂质的表征

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In the present study, trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium are analyzed by using novel GC-MS technique. A stream of high purity helium is purged through the material via a stainless steel bubbler of the type used to deliver the precursor for use in MOVPE film growth. The stream containing helium and volatile fractions from the source compound are swept into a sample loop, injected onto a chromatographic capillary column, and the eluted fractions subsequently indentured and sometimes quantified by mass spectrometry. A profile of headspace fractions is presented, along with their respective mass spectra. The relationship between the concentration of impurities in trimethylindium and the electron mobility in grown InP layers is explored.

机译：在本研究中，使用新型GC-MS技术分析了三甲基铟，三甲基铝和双（环戊二烯基）镁。高纯氦气流通过不锈钢起泡器吹扫通过材料，该起泡器用于输送用于MOVPE膜生长的前体。包含氦气和来自源化合物的挥发性馏分的物流被吹扫到样品定量环中，注入色谱毛细管色谱柱中，随后鉴定出洗脱的馏分，有时通过质谱定量。给出了顶空馏分的概况及其各自的质谱图。探索了三甲基铟中杂质浓度与生长的InP层中电子迁移率之间的关系。

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来源
《Journal of Crystal Growth》 |2003年第2期|p.82-85|共4页
作者
William B. Grant; Artashes Amamchyan; Robert S. Stennick; Deo V. Shenai;
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作者单位

Shipley Metalorganics, Shipley Company L.L.C., 60 Willow Street, North Andover, MA 01845, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. metalorganic vapor phase epitaxy; B1. bis(cyclopentadienyl)magnesium; B1. trimethylaluminum; B1. trimethylindium;

机译：A3。金属有机气相外延;B1。双（环戊二烯基）镁;B1。三甲基铝B1。三甲基铟;

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1. Correlation of film properties and reduced impurity concentrations in sources for Ⅲ/Ⅴ-MOVPE using high-purity trimethylindium and tertiarybutylphosphine [J] . Deodatta V. Shenai, Michael L. Timmons, Ronald L. DiCarlo Jr., Journal of Crystal Growth . 2004,第1a4期

机译：使用高纯度三甲基铟和叔丁基膦的Ⅲ/Ⅴ-MOVPE薄膜性质与降低源中杂质浓度的相关性
2. Optical properties of bis(cyclopentadienyl)magnesium: excimer-type luminescence of the bis(cyclopentadienyl) ligand frame [J] . Kunkely H, Vogler A Journal of Organometallic Chemistry . 2004,第18期

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GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium

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