Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

R. Paszkiewicz; B. Paszkiewicz; J. Kozlowski; M. Piasecki; W. Kosnikowski; M. Tlaczala

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Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

机译：晶体结构对MOVPE法生长的（Al，Ga）N外延层电学特性的影响

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The paper presents a study on the correlation between the material structure and electrical characteristics of nitride epitaxial layers grown by metalorganic vapour phase epitaxy (MOVPE) on sapphire substrate. Structural characterisation was performed by means of X-ray diffractometry. Distributions of crystallites lateral sizes as well as the lattice strains inside the blocks were studied. Twist and tilt mosaicities were examined using rocking curves and a specially chosen configuration, where an edge of the sample was illuminated. The grain sizes in the layers were calculated on the basis of peak profile analysis and solution of the Fredholm equations. The electrical properties of the nitride epitaxial layers were determined by impedance spectroscopy method. An attempt was made to correlate the layers of electrical and structural characteristics for better physical interpretation of the results and verification of epitaxial structures usefulness for device application.

机译：本文对金属有机气相外延（MOVPE）在蓝宝石衬底上生长的氮化物外延层的材料结构与电学特性之间的相关性进行了研究。结构表征通过X射线衍射法进行。研究了晶粒横向尺寸的分布以及块内部的晶格应变。使用摇摆曲线和特殊选择的配置检查扭曲和倾斜的镶嵌，其中样品的边缘被照亮。根据峰轮廓分析和Fredholm方程的解计算层中的晶粒尺寸。氮化物外延层的电学性质通过阻抗谱法确定。试图使电学和结构特征的各层相互关联，以更好地对结果进行物理解释，并验证外延结构对器件应用的有用性。

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来源
《Journal of Crystal Growth》 |2003年第2期|p.487-493|共7页
作者
R. Paszkiewicz; B. Paszkiewicz; J. Kozlowski; M. Piasecki; W. Kosnikowski; M. Tlaczala;
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作者单位

The Faculty of Microsystem Electronics and Photonic, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. characterization; A1. high-resolution X-ray diffraction; A1. impedance spectroscopy; A3. metalorganic vapor phase epitaxy; B1. nitrides;

机译：A1。表征;A1。高分辨率X射线衍射;A1。阻抗谱;A3。金属有机气相外延;B1。氮化物;

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1. Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer [J] . Sanorpim S., Takuma E., Katayama R., Physica status solidi, B. Basic research . 2003,第2期

机译：具有立方GaN（111）外延中间层的GaAs（111）B上MOVPE生长的GaN层的表征
2. Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (Ⅰ) ―Investigation of the Crystallographic Structure― [J] . Katsuhiko NAKAI, Koichi KITAHARA, Yasumitsu OHTA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4APt1期

机译：氮掺杂直拉生长硅衬底上外延层的晶体缺陷（Ⅰ）―晶体结构的研究―
3. Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy [J] . Ho Jin Park, Jongho Kim, Min Su Kim, Journal of Crystal Growth . 2008,第10期

机译：分子束外延生长镁掺杂GaAs外延层的电学特性
4. Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer [C] . S. Sanorpim, E. Takuma, R. Katayama, International conference on nitride semiconductors . 2003

机译：GaAs（111）B与立方GaN（111）外延中间层的表征Movpe-生长的GaN层
5. Microstructure evolution and electrical properties of indium arsenide grown epitaxially on gallium phosphide [D] . Gopal, Vidyut 2000

机译：磷化镓外延生长的砷化铟的微观结构演变和电性能
6. Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method [O] . Yu Xu, Chunfu Zhang, Yaolin Cheng, 2019

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7. Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers [O] . 2007

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8. Diffusion of Impurities from the Gas Stream in Epitaxial Layers of GaP Grown by the Sendovitch Method [R] . Dyakonov, L. I., Maslov, V. N. 1971

机译：sendovitch法生长Gap外延层气流中杂质的扩散

Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

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