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首页> 外文期刊>Journal of Crystal Growth >Transient temperature phenomena during sublimation growth of silicon carbide single crystals
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Transient temperature phenomena during sublimation growth of silicon carbide single crystals

机译：碳化硅单晶升华生长过程中的瞬态温度现象

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摘要

In this article, we use numerical simulation to investigate transient temperature phenomena during sublimation growth of SiC single crytals via physical vapor transport (also called the modified Lely method). We consider the evolution of temperatures at the SiC source and at the SiC seed crystal, which are highly relevant to the quality of the grown crystals, but inaccessible to direct measurements. The simulations are based on a transient mathematical model for the heat transport, including heat conduction, radiation, and radio frequency (RF) induction heating. Varying the position of the induction coil as well as the heating power, it is shown that the measurable temperature difference between the bottom and the top of the growth apparatus can usually not be used as a simple indicator for the respective temperature difference between SiC source and seed. Moreover, it is shown that there can be a time lag of 1.5h between the heating of the temperature measuring points and the heating of the interior of the SiC source.
机译：在本文中，我们使用数值模拟研究了通过物理气相传输（也称为改进的Lely方法）在SiC单晶的升华过程中的瞬态温度现象。我们考虑了SiC源和SiC晶种温度的变化，这与生长晶体的质量高度相关，但无法直接测量。模拟基于瞬态数学模型进行的热传输，包括热传导，辐射和射频（RF）感应加热。通过改变感应线圈的位置以及加热功率，可以看出，生长设备底部和顶部之间的可测量温度差通常不能用作表示SiC源和SiC各自温差的简单指标。种子。而且，显示出在温度测量点的加热与SiC源的内部的加热之间可能存在1.5h的时间差。

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