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Method for producing a silicon carbide single crystal growth seed crystal for silicon carbide single crystal growth seed crystal, the manufacturing method of silicon carbide single crystal, and silicon carbide single crystal

机译：用于碳化硅单晶生长籽晶的碳化硅单晶生长籽晶的制造方法，碳化硅单晶的制造方法以及碳化硅单晶

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摘要

PROBLEM TO BE SOLVED: To provide a method for stably growing a large-diameter silicon carbide single crystal with few crystal defects.;SOLUTION: A membrane crystal formed on a silicon carbide substrate which is used as a seed is grown. Preferably, the membrane crystal is composed of a single crystal epitaxial growth layer.;COPYRIGHT: (C)2006,JPO&NCIPI

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公开/公告号JP4733485B2

专利类型
公开/公告日2011-07-27

原文格式PDF
申请/专利权人昭和電工株式会社;
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申请/专利号JP20050269311
发明设计人坂口泰之;小柳直樹;村瀬典子;
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申请日2005-09-16
分类号C30B29/36;C30B23/02;C30B23/06;H01L21/02;H01L21/205;
国家 JP
入库时间 2022-08-21 18:20:17

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