Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

Wolfgang Braun; Bernd Jenichen; Vladimir M. Kaganer; Alexander S. Shtukenberg; Lutz Daweritz; Klaus H. Ploog

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Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

机译：通过同步加速器X射线衍射研究生长的GaAs（001）表面上的岛和坑动力学

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摘要

Using a newly built dedicated synchrotron X-ray diffraction beamline, we investigate the growth and recovery kinetics during MBE of GaAs (001). The coarsening of two-dimensional islands and pits are analyzed quantitatively and independently of the surface reconstruction. Growth oscillations fits are joined to fits of the subsequent recovery. We identify the fast recovery process as the annihilation of islands and pits. The slow recovery process is due to the coarsening of the remaining islands or pits.

机译：使用新建的专用同步加速器X射线衍射光束线，我们研究了GaAs（001）MBE期间的生长和恢复动力学。定量分析二维岛和凹坑的粗化，并且与表面重建无关。将增长振荡拟合与后续恢复的拟合结合在一起。我们将快速恢复过程确定为as灭岛屿和坑洼。恢复速度缓慢是由于剩余的岛或凹坑变粗。

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来源
《Journal of Crystal Growth》 |2003年第4期|p.56-61|共6页
作者
Wolfgang Braun; Bernd Jenichen; Vladimir M. Kaganer; Alexander S. Shtukenberg; Lutz Daweritz; Klaus H. Ploog;
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作者单位

Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. X-ray diffraction; A1. surface processes; A3. molecular beam epitaxy; B1. gallium compounds; B2. semiconducting Ⅲ-Ⅴ materials;

机译：A1。 X射线衍射;A1。表面工艺;A3。分子束外延B1。镓化合物B2。半导体Ⅲ-Ⅴ材料;

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专利

1. Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface X-ray diffraction [J] . Braun W, Kaganer VM, Jenichen B, Journal of Crystal Growth . 2005,第1a4期

机译：通过原位表面X射线衍射研究GaAs（001），InAs（001）和GaSb（001）在MBE生长过程中的表面动力学
2. Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction [J] . Kaganer VM, Braun W, Jenichen B, Physica, B. Condensed Matter . 2005,第1a2期

机译：原位X射线衍射研究分子束外延中GaAs（001）表面的恢复动力学
3. Layer-by-layer growth of GaAs(001) studied by in situ synchrotron X-ray diffraction [J] . Braun W., Jenichen B., Kaganer VM., Surface Science . 2003,第1a3期

机译：原位同步加速器X射线衍射研究GaAs（001）的逐层生长
4. Terrace and reconstruction dynamics on the growing GaAs001 surface studied by synchrotron X-ray diffraction [C] . Braun, W., Jenichen, . 2002

机译：同步加速器X射线衍射研究GaAs 001生长表面的平台化和重构动力学
5. Growth and structure of ultra-thin epitaxial chromium and iron oxide films on silver(001) and silver(111): A comprehensive study accomplished by x-ray photoelectron diffraction and low energy electron diffraction. [D] . Ozturk, Osman. 2002

机译：银（001）和银（111）上超薄外延铬和氧化铁膜的生长和结构：通过X射线光电子衍射和低能电子衍射完成的综合研究。
6. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study [O] . Tun-Wen Pi, Hsiao-Yu Lin, Ya-Ting Liu, 2013

机译：富GaAs（001）-4×6和As富GaAs（001）-2×4表面上三甲基铝原子层沉积的原子-原子相互作用：同步辐射辐射光发射研究
7. Hydride precipitation kinetics in Zircaloy-4 studied using synchrotron X-ray diffraction [O] . Olivier F. Courty, Arthur T. Motta, Christopher J. Piotrowski, 2015

机译：使用同步X射线衍射研究Zircaloy-4中的氢化物沉淀动力学
8. Using Synchrotron Radiation X-ray Multiple Diffraction to Examine the LatticeCoherency of Semiconductor Surfaces and Epitaxial Layers [R] . Sasaki, J. M., Cardoso, L. P., Campos, C., 1995

机译：使用同步辐射X射线多重衍射检测半导体表面和外延层的晶格相干性

Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

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